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- Publisher
- Springer Journals
- Copyright
- Copyright © 2000 by MAIK “Nauka/Interperiodica”
- Subject
- Engineering; Electronic and Computer Engineering
- ISSN
- 1063-7397
- eISSN
- 1608-3415
- DOI
- 10.1007/BF02773270
- Publisher site
- See Article on Publisher Site
Abstract
Flicker noise spectroscopy in disordered semiconductors is gaining wide acceptance both in physical investigation and in analysis of various microelectronics processes. Its successful use as a diagnostic tool in microtechnology is a result of advances in fundamental studies of flicker noise in semiconductors with disordered structure. In this work, we systematize experimental data for flicker noise phenomena in disordered semiconductors, specifically, in ion-implanted silicon
Journal
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007