Experiments are conducted to investigate the effect of hydrogen injection on polycrystalline-silicon (poly-Si) deposition by silane (SiH4) pyrolysis at 640–700°C in an industrial hot-wall LPCVD reactor, the hydrogen concentrations being comparable with the silane concentration. The main results are as follows: (1) Hydrogen injection raises the activation energy of silane pyrolysis from 171 to 247 kJ/mol. (2) Hydrogen injection considerably retards silane pyrolysis by affecting the molecular mechanism of the reaction in the gas phase, the effective reaction order in hydrogen being −2 ± 0.02. (3) The expended silane percentage is a complicated function of surface-area-to-volume ratio. (4) Process conditions at 700°C are identified that provide a uniform profile of deposition rate along the heated zone of the reactor; having doped with phosphorus, poly-Si films thus obtained are found to have conductivities 1.5 to 2 times as high as those of films deposited under standard conditions at 640°C and doped in the same fashion.
Russian Microelectronics – Springer Journals
Published: Mar 30, 2007
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