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One-Dimensional Study of Andreev Oscillations in a Nano-layer Between a Ferromagnetic Metal and an s-Wave Superconductor

One-Dimensional Study of Andreev Oscillations in a Nano-layer Between a Ferromagnetic Metal and... In this paper, based on scattering theory, we study tunneling conductance in a nano layer which is located between an s-wave superconductor and a ferromagnetic metal. The model is a double junction system as FM/NM/SC, in which FM is a ferromagnetic metal with exchange field of h, SC is a spin singlet s-wave superconductor and NM is a normal metal, with a barrier potential V. The thickness of intermediate layer varies between 1 nm to 1000 nm. We have found that the conductance oscillates as a function of bias voltage in a way that the period of oscillations does not depend on h, but depends on potential V. We have found the relation of the oscillations period in terms of V by two approaches: Analytic approach and numerical approach and we have observed that there is good agreement between these two approaches. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Low Temperature Physics Springer Journals

One-Dimensional Study of Andreev Oscillations in a Nano-layer Between a Ferromagnetic Metal and an s-Wave Superconductor

Journal of Low Temperature Physics , Volume 171 (2) – Oct 23, 2012

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References (1)

Publisher
Springer Journals
Copyright
Copyright © 2012 by Springer Science+Business Media New York
Subject
Physics; Condensed Matter Physics; Characterization and Evaluation of Materials; Magnetism, Magnetic Materials
ISSN
0022-2291
eISSN
1573-7357
DOI
10.1007/s10909-012-0785-2
Publisher site
See Article on Publisher Site

Abstract

In this paper, based on scattering theory, we study tunneling conductance in a nano layer which is located between an s-wave superconductor and a ferromagnetic metal. The model is a double junction system as FM/NM/SC, in which FM is a ferromagnetic metal with exchange field of h, SC is a spin singlet s-wave superconductor and NM is a normal metal, with a barrier potential V. The thickness of intermediate layer varies between 1 nm to 1000 nm. We have found that the conductance oscillates as a function of bias voltage in a way that the period of oscillations does not depend on h, but depends on potential V. We have found the relation of the oscillations period in terms of V by two approaches: Analytic approach and numerical approach and we have observed that there is good agreement between these two approaches.

Journal

Journal of Low Temperature PhysicsSpringer Journals

Published: Oct 23, 2012

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