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T. Hsu (2001)
MEMS and Microsystems: Design and Manufacture
E. Stamate, K. Ohe (2001)
On the surface condition of Langmuir probes in reactive plasmasApplied Physics Letters, 78
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Langmuir-Probe Diagnostics of Boron-Containing RF and Microwave Plasmas in Plasma-Immersion Ion ImplantationTr. FTIAN, 18
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Physics at Surfaces: Physisorption
T. Hsu (2001)
MEMS and Microsystems
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Comprehensive Supramolecular Chemistry
M. Lieberman, A. Lichtenberg (2005)
Principles of Plasma Discharges and Materials Processing: Lieberman/Plasma 2e
A. Zangwill (1988)
Physics at Surfaces
H. Amemiya, B. Annaratone, James Allen (1999)
The collection of positive ions by spherical and cylindrical probes in an electronegative plasmaPlasma Sources Science and Technology, 8
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Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO2Journal of Vacuum Science and Technology, 20
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Metody kontaktnoi diagnostiki v neravnovesnoi plazmokhimii
Francis Chen (2001)
Langmuir probe analysis for high density plasmasPhysics of Plasmas, 8
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Mask charging and profile evolution during chlorine plasma etching of siliconJournal of Vacuum Science and Technology, 18
A pulsed Langmuir probe method of plasma diagnostics is proposed and validated for low-pressure, high-density, low-temperature plasmas capable of producing a nonconducting film on the probe surface. The method essentially involves cyclic probe-surface cleaning by ion bombardment. A switching pattern of probe potential is designed, taking into account the mechanism by which a space-charge region is formed near the probe. The method is successfully employed in an experiment on inductively coupled CHF3 and Ar plasmas. The results of the experiment are presented.
Russian Microelectronics – Springer Journals
Published: Feb 1, 2007
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