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Liquid metal printing opening the way for energy conservation in semiconductor manufacturing industry

Liquid metal printing opening the way for energy conservation in semiconductor manufacturing... Front. Energy 2022, 16(4): 542–547 https://doi.org/10.1007/s11708-022-0834-8 VIEWPOINT Qian LI, Jing LIU Liquid metal printing opening the way for energy conservation in semiconductor manufacturing industry © Higher Education Press 2022     For nearly a century, semiconductor has kept playing an on the production line to the final packaging, checking and testing, etc. The whole process usually covers dozens extremely important role in promoting the advancement of complicated procedures. Any errors occurred over the of modern science, technology and society, owing to its process  would  lead  to  ultimate  wafer  scrap  and performance  advantages  and  industry-driven  feature. subsequent  huge  loss.  Therefore,  for  a  semiconductor Surprisingly, when the time comes to this day and age, manufacturing enterprise, its power supply often has to the semiconductor area, which is entering into its 3rd withstand  very  high  power  quality,  and  huge  energy generation  era,  even  develops  much  rapidly  than  ever consumption costs. To a large extent, the semiconductor before.  Overall,  the  semiconductor  industry  is  mainly industry can be regarded as a big electricity consuming driven  by  three  generations  of  materials.  The  first society,  whose  energy  conservation  and  consumption generation, represented by silicon (Si) and germanium reduction is therefore a must but not just a necessity. (Ge),  began  from  the  1950s.  The  second  generation, Recently, from an alternative other than the conven- represented  by  gallium  arsenide  (GaAs)  and  indium tional  high  temperature  manufacturing,  Li  et  al.  [1] phosphide  (InP),  emerged  from  the  1980s.  The  third proposed the room temperature printing of large area and generation, focusing on those of gallium nitride (GaN) wide bandgap ultrathin quasi-2D GaN semiconductor. As and silicon carbide (SiC), dated back to the late 20th the  first  ever  trial  in  the  field,  this  method  is  made century. The semiconductor industry, as the most capital, possible through introducing plasma mediated confined human and technology-intensive manufacturing area, is nitridation reaction of the printed liquid metal gallium often  faced  with  such  a  tough  challenge:  before  the (Fig. 1(c)).  The  new  conceptual  chemical  reaction production begins, water and electricity have to be in ◦ Plasma at 25 C formula  was  thus  established  as  N + 2Ga ! place.  Up  to  the  present,  nearly  all  the  classical 2GaN.  As  almost  an  iron  law  in  nature,  nitrogen  is semiconductor  growth  technologies  such  as  molecular http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Frontiers in Energy Springer Journals

Liquid metal printing opening the way for energy conservation in semiconductor manufacturing industry

Li, Qian; Liu, Jing
Frontiers in Energy , Volume 16 (4) – Aug 1, 2022
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Publisher
Springer Journals
Copyright
Copyright © Higher Education Press 2022
ISSN
2095-1701
eISSN
2095-1698
DOI
10.1007/s11708-022-0834-8
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Abstract

Front. Energy 2022, 16(4): 542–547 https://doi.org/10.1007/s11708-022-0834-8 VIEWPOINT Qian LI, Jing LIU Liquid metal printing opening the way for energy conservation in semiconductor manufacturing industry © Higher Education Press 2022     For nearly a century, semiconductor has kept playing an on the production line to the final packaging, checking and testing, etc. The whole process usually covers dozens extremely important role in promoting the advancement of complicated procedures. Any errors occurred over the of modern science, technology and society, owing to its process  would  lead  to  ultimate  wafer  scrap  and performance  advantages  and  industry-driven  feature. subsequent  huge  loss.  Therefore,  for  a  semiconductor Surprisingly, when the time comes to this day and age, manufacturing enterprise, its power supply often has to the semiconductor area, which is entering into its 3rd withstand  very  high  power  quality,  and  huge  energy generation  era,  even  develops  much  rapidly  than  ever consumption costs. To a large extent, the semiconductor before.  Overall,  the  semiconductor  industry  is  mainly industry can be regarded as a big electricity consuming driven  by  three  generations  of  materials.  The  first society,  whose  energy  conservation  and  consumption generation, represented by silicon (Si) and germanium reduction is therefore a must but not just a necessity. (Ge),  began  from  the  1950s.  The  second  generation, Recently, from an alternative other than the conven- represented  by  gallium  arsenide  (GaAs)  and  indium tional  high  temperature  manufacturing,  Li  et  al.  [1] phosphide  (InP),  emerged  from  the  1980s.  The  third proposed the room temperature printing of large area and generation, focusing on those of gallium nitride (GaN) wide bandgap ultrathin quasi-2D GaN semiconductor. As and silicon carbide (SiC), dated back to the late 20th the  first  ever  trial  in  the  field,  this  method  is  made century. The semiconductor industry, as the most capital, possible through introducing plasma mediated confined human and technology-intensive manufacturing area, is nitridation reaction of the printed liquid metal gallium often  faced  with  such  a  tough  challenge:  before  the (Fig. 1(c)).  The  new  conceptual  chemical  reaction production begins, water and electricity have to be in ◦ Plasma at 25 C formula  was  thus  established  as  N + 2Ga ! place.  Up  to  the  present,  nearly  all  the  classical 2GaN.  As  almost  an  iron  law  in  nature,  nitrogen  is semiconductor  growth  technologies  such  as  molecular

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Frontiers in Energy – Springer Journals

Published: Aug 1, 2022

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