A study of kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CCl2F2 is carried out. It is confirmed that the main chemically active particles providing the etching of GaAs are the chlorine atoms. It is shown that the character of kinetic curves and the form of dependences of the etching rate on gas pressure is determined by the energy of ions that bombard the surface. It is established that there is a satisfactory correlation between changes of the rate of decrease of the sample mass and the concentration of etching products in the discharge gas phase in the etching process in the stationary mode.
Russian Microelectronics – Springer Journals
Published: Nov 12, 2014
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