Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers

Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers The effect of Ni surface contamination on carrier recombination after high temperature processing of crystalline silicon wafers has been studied for a range of n- and p-type resistivities. The results suggest that the presence of Ni precipitates at the wafer surfaces, formed during cooling, dominate the measured lifetimes. These precipitates exhibit a greater impact on the low-injection lifetime in p-type samples than in n-type. In addition, the injection-dependent lifetime curves for the n-type samples changed from increasing to decreasing with injection-level as the resistivity increased above approximately 10 Ω cm. In most cases, the surface recombination velocity attributable to the presence of these Ni precipitates at the oxidized surfaces increased linearly with the Ni dose. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers

Loading next page...
 
/lp/springer-journals/impact-of-nickel-contamination-on-carrier-recombination-in-n-and-p-HGDCQZ9Blu

References (23)

Publisher
Springer Journals
Copyright
Copyright © 2005 by Springer-Verlag
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
DOI
10.1007/s00339-005-3371-5
Publisher site
See Article on Publisher Site

Abstract

The effect of Ni surface contamination on carrier recombination after high temperature processing of crystalline silicon wafers has been studied for a range of n- and p-type resistivities. The results suggest that the presence of Ni precipitates at the wafer surfaces, formed during cooling, dominate the measured lifetimes. These precipitates exhibit a greater impact on the low-injection lifetime in p-type samples than in n-type. In addition, the injection-dependent lifetime curves for the n-type samples changed from increasing to decreasing with injection-level as the resistivity increased above approximately 10 Ω cm. In most cases, the surface recombination velocity attributable to the presence of these Ni precipitates at the oxidized surfaces increased linearly with the Ni dose.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Nov 8, 2005

There are no references for this article.