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- Publisher
- Springer Journals
- Copyright
- Copyright © 2010 by Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.
- Subject
- Physics; Physics, general; Applied and Technical Physics; Quantum Physics
- ISSN
- 1749-4885
- eISSN
- 1749-4893
- DOI
- 10.1038/nphoton.2010.157
- Publisher site
- See Article on Publisher Site
Abstract
The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which include high responsivity from visible to near-infrared wavelengths, high bandwidths and compatibility with silicon complementary metal–oxide–semiconductor circuits, these devices can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and infrared imaging at low cost and low power consumption. This Review summarizes the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors.
Journal
Nature Photonics – Springer Journals
Published: Jul 30, 2010