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M.I. Gorlov, A.V. Strogonov (1996)
Gerentology of Integrated Circuits: Prediction of the IC LifetimePeterb. Zh. Elektron., 4
M.I. Gorlov, A.V. Strogonov (1997)
Materialy nauchno-tekhnicheskogo seminara “Shumovye i degradatsionnye protsessy v poluprovodnikovykh priborakh (metrologiya, diagnostika, tekhnologiya)”
M.I. Gorlov, A.V. Strogonov (1997)
Gerentology of Integrated Circuits: Lifetime of Aluminum MetallizationPeterb. Zh. Electron., 1
I.T. Aleksanyan, V.M. Krivoshapko (1981)
Simulation of Parametric Failures and the Study of IC ReliabilityElektron. Tekh., Ser. 8: Upr. Kach. Stand. Metrol. Ispyt., 4
M.I. Gorlov, A.V. Strogonov, V.V. Martynov, M.V. Bashkatov (1999)
The Effect of Long-Term Mechanical Action on the Drift of Series-134 IC Electric ParametersIzv. Vyssh. Uchebn. Zaved., Elektron., 6
M.I. Gorlov, A.V. Strogonov (1997)
Gerentology of Integrated Circuits: Lifetime of Oxide FilmsPeterb. Zh. Electron., 2
M.I. Gorlov, A.V. Strogonov (1999)
Silicon Bipolar Logical IC Lifetime Predicted from Parametric FailuresIzv. Vyssh. Uchebn. Zaved., Electron., 3
M.I. Gorlov, A.V. Strogonov (1997)
Prediction of the IC Lifetime Using the Method of Nonstationary Time SeriesIzv. Vyssh. Uchebn. Zaved., Elektron., 2
The lifetime of silicon ICs in relation to material and component aging is discussed. The service time of the circuits was predicted from accelerated tests. The lifetime of circuits of series 106, 134, 1804, 582, and 136 was evaluated from parameter failures with the Box–Jenkins model.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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