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Formation of Polycrystalline Boron Carbide B4C with Elevated Fracture Toughness

Formation of Polycrystalline Boron Carbide B4C with Elevated Fracture Toughness We have studied the processes of formation of high-density polycrystalline boron carbide B4C during sintering under high pressure (5.5 GPa) and at high temperature (2200 K). Study of the structure by transmission electron microscopy showed that under the indicated conditions for sintering B4C powders with original particle size range 2–80 µm, processes of primary recrystallization occur, as a result of which interlayers of nanodispersed grains (10–50 nm) are formed in the near-surface regions of the original coarse grains. The microhardness of such material is 41 GPa, and the fracture toughness is 7.2 MPa · m1/2. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Powder Metallurgy and Metal Ceramics Springer Journals

Formation of Polycrystalline Boron Carbide B4C with Elevated Fracture Toughness

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Publisher
Springer Journals
Copyright
Copyright © 2005 by Springer Science+Business Media, Inc.
Subject
Materials Science; Characterization and Evaluation of Materials; Metallic Materials; Ceramics, Glass, Composites, Natural Materials
ISSN
1068-1302
eISSN
1573-9066
DOI
10.1007/s11106-005-0060-z
Publisher site
See Article on Publisher Site

Abstract

We have studied the processes of formation of high-density polycrystalline boron carbide B4C during sintering under high pressure (5.5 GPa) and at high temperature (2200 K). Study of the structure by transmission electron microscopy showed that under the indicated conditions for sintering B4C powders with original particle size range 2–80 µm, processes of primary recrystallization occur, as a result of which interlayers of nanodispersed grains (10–50 nm) are formed in the near-surface regions of the original coarse grains. The microhardness of such material is 41 GPa, and the fracture toughness is 7.2 MPa · m1/2.

Journal

Powder Metallurgy and Metal CeramicsSpringer Journals

Published: Jun 4, 2005

References