Access the full text.
Sign up today, get DeepDyve free for 14 days.
Loading next page...
/lp/springer-journals/first-principles-studies-for-magnetism-in-cu-doped-gan-VK0xHd1jGh
References (25)
-
X. Yang, Zhijian Chen, C. Wang, Yuhao Zhang, X. Pei, Z. Yang, G. Zhang, Z. Ding, Kang Wang, S. Yao (2009)
Structural, optical, and magnetic properties of Cu-implanted GaN filmsJournal of Applied Physics, 105
-
A. Rosa, R. Ahuja (2007)
Weak ferromagnetism in Cu-doped GaNApplied Physics Letters, 91
-
H. Seong, Jae-Young Kim, Ju-Jin Kim, Seung-Cheol Lee, So-Ra Kim, Ungkil Kim, T. Park, Heon-Jin Choi (2007)
Room-temperature ferromagnetism in Cu doped GaN nanowires.Nano letters, 7 11
-
Jong-Han Lee, I. Choi, S. Shin, Sunggoo Lee, Junyeong Lee, C. Whang, Seung-Cheol Lee, Kwangtaek Lee, J. Baek, K. Chae, J. Song (2007)
Room-temperature ferromagnetism of Cu-implanted GaNApplied Physics Letters, 90
-
S. Dhar, O. Brandt, A. Trampert, L. Däweritz, K. Friedland, K. Ploog, J. Keller, B. Beschoten, G. Güntherodt (2003)
Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxyApplied Physics Letters, 82
-
H. Liu, Stephen Wu, Rakesh Singh, L. Gu, David Smith, Nathan Newman, N. Dilley, L. Montes, M. Simmonds (2004)
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlNApplied Physics Letters, 85
-
B. Seipel, R. Erni, Amita Gupta, C. Li, F. Owens, K. Rao, N. Browning, P. Moeck (2007)
Structural and ferromagnetic properties of Cu-doped GaNJournal of Materials Research, 22
-
T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand (2000)
Zener model description of ferromagnetism in zinc-blende magnetic semiconductorsScience, 287 5455
-
A. Polyakov, N. Smirnov, A. Govorkov, N. Pashkova, A. Shlensky, S. Pearton, M. Overberg, C. Abernathy, J. Zavada, R. Wilson (2003)
Electrical and optical properties of Cr and Fe implanted n-GaNJournal of Applied Physics, 93
-
P. Ganz, C. Sürgers, G. Fischer, D. Schaadt (2010)
Cu-doped GaN grown by molecular beam epitaxy, 200
-
B. Kang, H. Lee (2010)
Electronic Structure and Magnetic Moments of Copper-atom in/on GaN SemiconductorJournal of Magnetics, 15
-
Jiaguang Han, F. Wan, Zhiyuan Zhu, Weili Zhang (2006)
Dielectric response of soft mode in ferroelectric SrTiO3Applied Physics Letters, 90
-
S. Sarma, Euyheon Hwang, A. Kaminski (2002)
Temperature-dependent magnetization in diluted magnetic semiconductorsPhysical Review B, 67
-
Subhabrata Dhar, Lucas Pérez, Oliver Brandt, Achim Trampert, K. Ploog, J. Keller, B. Beschoten (2004)
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 KPhysical Review B, 72
-
(2010)
Electronic structure and magnetic moments of copper - atom in / on GaN semiconductor [ J ] -
R. Wu, G. Peng, Lei Liu, Y. Feng, Zufang Huang, Q. Wu (2006)
Cu-doped GaN: A dilute magnetic semiconductor from first-principles studyApplied Physics Letters, 89
-
M. Reed, N. El-Masry, H. Stadelmaier, M. Ritums, M. Reed, C. Parker, J. Roberts, S. Bedair (2001)
Room temperature ferromagnetic properties of (Ga, Mn)NApplied Physics Letters, 79
-
G. Thaler, M. Overberg, B. Gila, R. Frazier, C. Abernathy, S. Pearton, J. Lee, See‐Hyung Lee, Y. Park, Z. Khim, J. Kim, F. Ren (2002)
Magnetic properties of n-GaMnN thin filmsApplied Physics Letters, 80
-
S. Han, J. Hite, G. Thaler, R. Frazier, C. Abernathy, S. Pearton, Hyung Choi, Woorim Lee, Y. Park, J. Zavada, R. Gwilliam (2006)
Effect of Gd Implantation on the Structural and Magnetic Properties of GaN and AlNApplied Physics Letters, 88
-
Hongjun Xiang, S. Wei (2008)
Enhanced ferromagnetic stability in Cu doped passivated GaN nanowires.Nano letters, 8 7
-
H. Ohno (1998)
Making nonmagnetic semiconductors ferromagneticScience, 281 5379
-
Sang-Eon Park, Hyeon-Jun Lee, Y. Cho, Se-Young Jeong, C. Cho, Sunglae Cho (2002)
Room-temperature ferromagnetism in Cr-doped GaN single crystalsApplied Physics Letters, 80
-
M. Reed, F. Arkun, E. Berkman, N. El-Masry, J. Zavada, M. Luen, M. Reed, S. Bedair (2005)
Effect of doping on the magnetic properties of GaMnN: Fermi level engineeringApplied Physics Letters, 86
-
X. Cui, J. Medvedeva, B. Delley, A. Freeman, N. Newman, C. Stampfl (2005)
Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN.Physical review letters, 95 25
-
J. Baik, Ho Jang, J. Kim, Jong‐Lam Lee (2003)
Effect of microstructural change on magnetic property of Mn-implanted p-type GaNApplied Physics Letters, 82
- Publisher
- Springer Journals
- Copyright
- Copyright © 2011 by Wuhan University and Springer-Verlag Berlin Heidelberg
- Subject
- Mathematics; Computer Science, general; Mathematics, general; Life Sciences, general ; Physics, general
- ISSN
- 1007-1202
- eISSN
- 1993-4998
- DOI
- 10.1007/s11859-011-0744-9
- Publisher site
- See Article on Publisher Site
Abstract
Hole carrier mediated magnetization in Cu-doped GaN is investigated by using the first-principles calculations. By studying the sp-d interaction and the direct exchange interaction among the dopants, we obtain an equation to determine the spontaneous magnetization as a function of the Cu dopant concentration and the hole carrier density. It is demonstrated that nonmagnetic Cu doped GaN can be of room-temperature ferromagnetism. The system’s Curie temperature T c can reach about 345 K with Cu concentration of 1.0% and hole carrier density of 5.0×10 19 cm −3 . The results are in good agreement with experimental observations and indicate that ferromagnetism in this systems is tunable by controlling the Cu concentration and the hole carrier density.
Journal
Wuhan University Journal of Natural Sciences – Springer Journals
Published: Jun 1, 2011