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Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP

Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using... This paper reports a systematic study of the effects of the cracker cell temperature and the input V/III ratio on the growth of GaInP. GaInP epilayers were grown on GaAs (001) substrates using triisopropylgallium, ethyldimethylindium and tertiarybutylphosphine by chemical beam epitaxy. The surface morphology, growth rate, low temperature (15 K) and room temperature (300 K) photoluminescence (PL) were studied as a function of the cracker cell temperature and input V/III ratio. At an optimum cracker cell temperature and input V/III ratio, the PL spectrum showed only a strong band edge peak with a full width at half maximum of 10.8 meV. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science Springer Journals

Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP

Journal of Materials Science , Volume 38 (17) – Oct 5, 2004

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References (20)

Publisher
Springer Journals
Copyright
Copyright © 2003 by Kluwer Academic Publishers
Subject
Materials Science; Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics
ISSN
0022-2461
eISSN
1573-4803
DOI
10.1023/A:1025693818147
Publisher site
See Article on Publisher Site

Abstract

This paper reports a systematic study of the effects of the cracker cell temperature and the input V/III ratio on the growth of GaInP. GaInP epilayers were grown on GaAs (001) substrates using triisopropylgallium, ethyldimethylindium and tertiarybutylphosphine by chemical beam epitaxy. The surface morphology, growth rate, low temperature (15 K) and room temperature (300 K) photoluminescence (PL) were studied as a function of the cracker cell temperature and input V/III ratio. At an optimum cracker cell temperature and input V/III ratio, the PL spectrum showed only a strong band edge peak with a full width at half maximum of 10.8 meV.

Journal

Journal of Materials ScienceSpringer Journals

Published: Oct 5, 2004

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