Access the full text.
Sign up today, get DeepDyve free for 14 days.
J. Knauf, D. Schmitz, G. Strauch, H. Jürgensen, M. Heyen, A. Melas (1988)
Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPEJournal of Crystal Growth, 93
D. Cao, A. Kimball, G. Chen, K. Fry, G. Stringfellow (1989)
Organometallic vapor‐phase epitaxy of high‐quality Ga0.51In0.49P at high growth ratesJournal of Applied Physics, 66
J. Quigley, M. Hafich, H. Lee, R. Stave, G. Robinson (1989)
Growth of InGaP on GaAs using gas‐source molecular‐beam epitaxyJournal of Vacuum Science & Technology B, 7
T. Chiu, J. Cunningham, A. Robertson (1989)
Surface chemical kinetics during the growth of GaAs by chemical beam epitaxyJournal of Crystal Growth, 95
C. Hill, G. Stringfellow, L. Sadwick (1995)
Pyrolysis of tertiarybutylphosphine at low pressureJournal of Electronic Materials, 24
K. Ozasa, M. Yuri, Shigehisa Tanaka, H. Matsunami (1989)
Metalorganic molecular‐beam epitaxy of InGaPJournal of Applied Physics, 65
K. Fry, C. Kuo, C. Larsen, R. Cohen, G. Stringfellow, A. Melas (1986)
OMVPE growth of InP and Ga0.47ln0.53as using ethyldimethylindiumJournal of Electronic Materials, 15
A. Chin, P. Martin, U. Das, J. Mazurowski, J. Ballingall (1993)
Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethaneJournal of Vacuum Science & Technology B, 11
P. Lane, T. Martin, R. Freer, P. Calcott, C. Whitehouse, A. Jones, S. Rushworth (1992)
Tri‐isopropyl gallium: A very promising precursor for chemical beam epitaxyApplied Physics Letters, 61
T. Kaneko, H. Asahi, S. Gonda (1992)
Theoretical consideration of the growth kinetics for GaAs and GaSbJournal of Crystal Growth, 120
G. Stringfellow (1989)
Organometallic Vapor-Phase Epitaxy: Theory and Practice
D. Bohling, C. Abernathy, K. Jensen (1994)
Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxyJournal of Crystal Growth, 136
J. Roberts, G. Scott, J. Gowers (1981)
Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxyJournal of Applied Physics, 52
M. Delong, D. Mowbray, R. Hogg, M. Skolnick, J. Williams, K. Meehan, S. Kurtz, J. Olson, R. Schneider, Min-Lin Wu, M. Hopkinson (1995)
Band gap of ‘‘completely disordered’’ Ga0.52In0.48PApplied Physics Letters, 66
D. Mowbray, O. Kowalski, M. Skolnick, M. Delong, M. Hopkinson, J. David, A. Cullis (1994)
Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wellsJournal of Applied Physics, 75
J. Garcia, P. Regreny, S. Delage, H. Blanck, J. Hirtz (1993)
Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphineJournal of Crystal Growth, 127
R. Freer, T. Martin, P. Lane, C. Whitehouse, R. Hogan, J. Foord, A. Jones (1993)
Mechanistic studies of the CBE growth of (100) GaAs using the new precursor tri-isopropylgalliumJournal of Crystal Growth, 127
G. Stringfellow (1988)
Non-hydride group V sources for OMVPEJournal of Electronic Materials, 17
Y. Su, M. Wu, Chin‐Sheng Chang, K. Cheng (1986)
Electrical and optical properties of high purity In0.5Ga0.5P grown on GaAs by liquid-phase epitaxyJournal of Crystal Growth, 76
N. Singh, J. Foord, P. Skevington, G. Davies (1992)
Growth and MBMS studies of reaction mechanisms for InxGa1−xAs CBEJournal of Crystal Growth, 120
This paper reports a systematic study of the effects of the cracker cell temperature and the input V/III ratio on the growth of GaInP. GaInP epilayers were grown on GaAs (001) substrates using triisopropylgallium, ethyldimethylindium and tertiarybutylphosphine by chemical beam epitaxy. The surface morphology, growth rate, low temperature (15 K) and room temperature (300 K) photoluminescence (PL) were studied as a function of the cracker cell temperature and input V/III ratio. At an optimum cracker cell temperature and input V/III ratio, the PL spectrum showed only a strong band edge peak with a full width at half maximum of 10.8 meV.
Journal of Materials Science – Springer Journals
Published: Oct 5, 2004
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.