We experimentally studied the sensitivity and initial voltage offset between the collectors of the lateral dual-collector n-p-n magnetotransistor with the base formed in a well that serves as a third collector at a lowered rate of the surface recombination in the base. The operation mode and parameters of the device are determined by its connection circuit. We demonstrate that the voltage magnetosensitivity of the device attains 11 V/T.
Russian Microelectronics – Springer Journals
Published: Nov 7, 2013
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