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Effect of microstructure of SiC layer on the indentation properties of silicon carbide–graphite system fabricated by LPCVD method

Effect of microstructure of SiC layer on the indentation properties of silicon carbide–graphite... JOURNAL OF MATERIALS SCIENCE L ETTERS 20, 2001, 1229 – 1231 Effect of microstructure of SiC layer on the indentation properties of silicon carbide–graphite system fabricated by LPCVD method KEE SUNG LEE , J I YEON PARK, WEON-JU KIM, GYE WON HONG Functional Materials, Korea Atomic Energy Research Institute, Taejon 305-353, Korea E-mail: jypark@kaeri.re.kr Graphite is an attractive material for high temperature deposition layer was chemically uniform and highly applications because of its high sublimation tempera- dense of β -SiC. Fig. 1a shows the microstructure of ◦ ◦ ture above 3000 C and high thermal shock resistance. the SiC layer deposited at 1300 C for 2 h, which con- Lightweight and low friction coefficient enable many sists of faceted grains with a size of about 2.5–25 µ m. applications such as brakes in the air industry and sup- On the other hand, the specimen fabricated at 1200 C porters in wafer processing of the semiconductor indus- for 3 h reveals a microstructure with mainly equiaxed try. However, low density, inferior oxidation resistance, grains of mean grain size of about 50 µ m as shown and high wear rate need to be coated by hard layers. in Fig. 1b. Most http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science Letters Springer Journals

Effect of microstructure of SiC layer on the indentation properties of silicon carbide–graphite system fabricated by LPCVD method

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References (10)

Publisher
Springer Journals
Copyright
Copyright © 2001 by Kluwer Academic Publishers
Subject
Materials Science; Characterization and Evaluation of Materials; Industrial Chemistry/Chemical Engineering; Polymer Sciences; Classical Mechanics
ISSN
0261-8028
eISSN
1573-4811
DOI
10.1023/A:1010979007886
Publisher site
See Article on Publisher Site

Abstract

JOURNAL OF MATERIALS SCIENCE L ETTERS 20, 2001, 1229 – 1231 Effect of microstructure of SiC layer on the indentation properties of silicon carbide–graphite system fabricated by LPCVD method KEE SUNG LEE , J I YEON PARK, WEON-JU KIM, GYE WON HONG Functional Materials, Korea Atomic Energy Research Institute, Taejon 305-353, Korea E-mail: jypark@kaeri.re.kr Graphite is an attractive material for high temperature deposition layer was chemically uniform and highly applications because of its high sublimation tempera- dense of β -SiC. Fig. 1a shows the microstructure of ◦ ◦ ture above 3000 C and high thermal shock resistance. the SiC layer deposited at 1300 C for 2 h, which con- Lightweight and low friction coefficient enable many sists of faceted grains with a size of about 2.5–25 µ m. applications such as brakes in the air industry and sup- On the other hand, the specimen fabricated at 1200 C porters in wafer processing of the semiconductor indus- for 3 h reveals a microstructure with mainly equiaxed try. However, low density, inferior oxidation resistance, grains of mean grain size of about 50 µ m as shown and high wear rate need to be coated by hard layers. in Fig. 1b. Most

Journal

Journal of Materials Science LettersSpringer Journals

Published: Oct 1, 2004

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