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JOURNAL OF MATERIALS SCIENCE L ETTERS 20, 2001, 1229 – 1231 Effect of microstructure of SiC layer on the indentation properties of silicon carbide–graphite system fabricated by LPCVD method KEE SUNG LEE , J I YEON PARK, WEON-JU KIM, GYE WON HONG Functional Materials, Korea Atomic Energy Research Institute, Taejon 305-353, Korea E-mail: jypark@kaeri.re.kr Graphite is an attractive material for high temperature deposition layer was chemically uniform and highly applications because of its high sublimation tempera- dense of β -SiC. Fig. 1a shows the microstructure of ◦ ◦ ture above 3000 C and high thermal shock resistance. the SiC layer deposited at 1300 C for 2 h, which con- Lightweight and low friction coefficient enable many sists of faceted grains with a size of about 2.5–25 µ m. applications such as brakes in the air industry and sup- On the other hand, the specimen fabricated at 1200 C porters in wafer processing of the semiconductor indus- for 3 h reveals a microstructure with mainly equiaxed try. However, low density, inferior oxidation resistance, grains of mean grain size of about 50 µ m as shown and high wear rate need to be coated by hard layers. in Fig. 1b. Most
Journal of Materials Science Letters – Springer Journals
Published: Oct 1, 2004
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