Access the full text.
Sign up today, get DeepDyve free for 14 days.
G. Omar, C.-W. Tan (1999)
ON Semiconductor 1st Manufacturing Technology Symposium
K. Toyozawa, K. Fujita, S. Minamide, T. Maeda (1990)
Development of Copper Wire Bonding Application TechnologyIEEE Trans. Compon. Hybrids Manuf. Technol., 13
Tim Koch, Wayne Richliug, J. Whitlock, Dave Hall (1986)
A Bond Failure Mechanism24th International Reliability Physics Symposium
G.G. Harman (1989)
Reliability and Yield Problems of Wire Bonding in Microelectronics—The Application of Materials and Interface Science
H. Koyama, H. Shiozaki, I. Okumura, S. Mizugahsira, H. Higuchi, T. Ajiki (1988)
Proc. of 26th International Reliability Physics Symposium
L. Nguyen, D. Mcdonald, A. Danker, P. Ng (1995)
Optimization of copper wire bonding on Al-Cu metallizationIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 18
W. Whitlock (1997)
Shimadzu Dynamic Ultra Micro Hardness Tester Model DUH-202 User’s Guide
S. Mori, H. Yoshida, N. Uchiyama (1988)
The development of new copper ball bonding-wire38th Electronics Components Conference 1988., Proceedings.
W.H. Lycette, E.R. Knight, S.W. Hinch (1982)
Thermosonic and Ultrasonic Wire Bonding to GaAs FETsInt. J. Hybrid Microelectron., 5
W. Tomlinson, R. Winkle, L. Blackmore (1990)
Effect of heat treatment on the shear strength and fracture modes of copper wire thermosonic ball bonds to Al-1% Si device metallizationIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 13
G. Clatterbaugh, H. Charles (1989)
The effect of high-temperature intermetallic growth on ball shear-induced crateringIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 13
T. Kosh, W. Richling, W. Whitlock (1986)
24th Annual Proc. Reliability Physics
Kenji Toyozawa, Kazuya Fujita, Syozo Minamide, Takamichi Maeda (1990)
Development of copper wire bonding application technology40th Conference Proceedings on Electronic Components and Technology
L. Khoury, David Burkhard, D. Galloway, T. Scharr (1990)
A comparison of copper and gold wire bonding on integrated circuit devices40th Conference Proceedings on Electronic Components and Technology
S.L. Khoury, D.J. Burkhard, D.P. Galloway, T.A. Scharr (1990)
A Comparison of Copper and Gold Wire Bonding on Integrated Circuit DevicesIEEE Trans. Compon. Hybrids Manuf. Technol., 13
Copper wire bonding offers several mechanical and electrical advantages as well as cost saving compared to its gold wire predecessor. Despite these benefits, silicon cratering, which completes the fracture and removal of bond pad underlayers, has been a major hurdle to overcome in copper wire bonding. Copper wire is harder than gold, and thus needs greater ultrasonic power and bond force to bond it onto metal pads such as aluminum. This paper reports a study on the influence of wire materials, bond pad hardness, and bonding-machine parameters (i.e., ultrasonic power and bond force) on silicon cratering phenomenon. Ultrasonic power and z-axis bond force were identified as the most critical bonding machine parameters in silicon cratering defects. A combination of greater bond force and lower ultrasonic power avoids silicon cratering and gives the desired effects. Results also show that a harder bond pad provides relatively good protection from silicon cratering.
Journal of Materials Engineering and Performance – Springer Journals
Published: Jun 1, 2002
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.