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Characterization and Low-Temperature Resistivity of Thin CeIn3 Films Prepared by Co-sputtering

Characterization and Low-Temperature Resistivity of Thin CeIn3 Films Prepared by Co-sputtering Thin films of the heavy-fermion system CeIn3 were prepared by simultaneous dc sputtering of two stoichiometric CeIn3 targets and dc magnetron sputtering of a pure indium target in argon gas. The films were grown at a high rate of ∼30 Å/s on 10×20 mm2 r-cut sapphire substrates heated to 500 °C. The resultant 120-nm thick films were continuous and stoichiometric, although indium precipitates of 1 μm size were observed on the surface. The films exhibited the expected cubic structure with the lattice parameter of 4.692 Å. They were predominantly (111) oriented, with minor amounts of (100) and (110) oriented grains. The dependence of the electrical resistivity on temperature, ρ(T), is typically that of bulk CeIn3 with a clear maximum at around 50 K, followed by a linear decrease towards lower temperatures. At 10 K a kink in ρ(T) indicates the antiferromagnetic ordering of CeIn3. The temperature dependence of the resistivity between 1.2 and 10 K is discussed in terms of electron-electron and electron-magnon scattering. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Low Temperature Physics Springer Journals

Characterization and Low-Temperature Resistivity of Thin CeIn3 Films Prepared by Co-sputtering

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References (1)

Publisher
Springer Journals
Copyright
Copyright © 2012 by Springer Science+Business Media, LLC
Subject
Physics; Condensed Matter Physics; Characterization and Evaluation of Materials; Magnetism, Magnetic Materials
ISSN
0022-2291
eISSN
1573-7357
DOI
10.1007/s10909-012-0625-4
Publisher site
See Article on Publisher Site

Abstract

Thin films of the heavy-fermion system CeIn3 were prepared by simultaneous dc sputtering of two stoichiometric CeIn3 targets and dc magnetron sputtering of a pure indium target in argon gas. The films were grown at a high rate of ∼30 Å/s on 10×20 mm2 r-cut sapphire substrates heated to 500 °C. The resultant 120-nm thick films were continuous and stoichiometric, although indium precipitates of 1 μm size were observed on the surface. The films exhibited the expected cubic structure with the lattice parameter of 4.692 Å. They were predominantly (111) oriented, with minor amounts of (100) and (110) oriented grains. The dependence of the electrical resistivity on temperature, ρ(T), is typically that of bulk CeIn3 with a clear maximum at around 50 K, followed by a linear decrease towards lower temperatures. At 10 K a kink in ρ(T) indicates the antiferromagnetic ordering of CeIn3. The temperature dependence of the resistivity between 1.2 and 10 K is discussed in terms of electron-electron and electron-magnon scattering.

Journal

Journal of Low Temperature PhysicsSpringer Journals

Published: Apr 13, 2012

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