Pure ZnO and Ga (3 % w/w) and Ag (3 % w/w)-doped ZnO nanowires (NWs) have been grown by use of the hot-walled pulse laser deposition technique. The doping characteristics of Ga and Ag in ZnO NWs were analyzed by use of photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) and the results were compared with those for pure ZnO NWs. We also fabricated gas sensors by use of pure ZnO and Ga and Ag-doped ZnO NWs. Among the NW sensors, the Ag-doped NW sensor was most sensitive. We synthesized the NWs on sapphire substrates under different conditions, for example temperature, time, gas flow, and distance between target and substrate. The diameter and length of NWs were <100 nm and several microns, respectively. To analyze the effect of Ag doping on ZnO NWs, we investigated the near band edge emission by use of low-temperature PL and XPS. Significant changes in resistance and sensitivity were observed. When the sensors were used at 300 °C for detection of 1 ppm ethanol vapor, the sensitivity of the pure ZnO and the Ga and Ag-doped ZnO NW gas sensors was 97, 48, and 203 %, respectively.
Research on Chemical Intermediates – Springer Journals
Published: Nov 9, 2013
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