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Catalytic growth and characterization of Ga2O3 nanowires

Catalytic growth and characterization of Ga2O3 nanowires β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

Catalytic growth and characterization of Ga2O3 nanowires

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Publisher
Springer Journals
Copyright
Copyright © 2002 by Springer-Verlag
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
DOI
10.1007/s00339-002-2016-1
Publisher site
See Article on Publisher Site

Abstract

β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Mar 1, 2003

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