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Broad excitation of Er luminescence in Er-doped HfO2 films

Broad excitation of Er luminescence in Er-doped HfO2 films We investigated the broad and sensitized luminescence properties of Er-doped HfO2 films synthesized by pulsed laser deposition (PLD) and ion implantation techniques. In the investigation we focused on the mechanism of energy transfer in the host matrix. Based on the comparison of photoluminescence (PL), photoluminescence excitation (PLE), and cathode-luminescence (CL), as well as on microstructure measurements, an excitation transfer process resulting in the broad excitation for Er, luminescence at 1540 nm, is identified. In this process, the oxygen vacancies and Hf in the host HfO2 serve mainly as effective sensitizers for neighboring Er ions in the nonresonant excitation process. Furthermore, the direct Er3+ intra-4f transitions and full spectral emission of Er ions in the HfO2 matrix are clearly observed under the wide-spectrum excitation in the CL measurement. This reveals more detailed features for the energy transfer and transition processes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

Broad excitation of Er luminescence in Er-doped HfO2 films

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References (33)

Publisher
Springer Journals
Copyright
Copyright © 2008 by Springer-Verlag
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
DOI
10.1007/s00339-008-4820-8
Publisher site
See Article on Publisher Site

Abstract

We investigated the broad and sensitized luminescence properties of Er-doped HfO2 films synthesized by pulsed laser deposition (PLD) and ion implantation techniques. In the investigation we focused on the mechanism of energy transfer in the host matrix. Based on the comparison of photoluminescence (PL), photoluminescence excitation (PLE), and cathode-luminescence (CL), as well as on microstructure measurements, an excitation transfer process resulting in the broad excitation for Er, luminescence at 1540 nm, is identified. In this process, the oxygen vacancies and Hf in the host HfO2 serve mainly as effective sensitizers for neighboring Er ions in the nonresonant excitation process. Furthermore, the direct Er3+ intra-4f transitions and full spectral emission of Er ions in the HfO2 matrix are clearly observed under the wide-spectrum excitation in the CL measurement. This reveals more detailed features for the energy transfer and transition processes.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Aug 1, 2008

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