Analysis of interface states in Au/ZnO/p-InP (MOS) structure

Analysis of interface states in Au/ZnO/p-InP (MOS) structure Zinc oxide (ZnO) film was deposited on p-type InP substrate by means of radio frequency magnetron sputtering technique and thus the Au/ZnO/p-InP (MOS) structure was fabricated. The crystal structure and surface morphology of ZnO film deposited on InP were characterized by X-ray diffraction and atomic force microscopy, respectively. The analysis of interface states of the structure is studied using admittance (Y = G + iωC) measurements at room temperature. It is observed that the capacitance and conductance measurements change with frequency. This change is attributed to the presence of interface states. To determine the interface state density (Nss), the high-low frequency (CHF–CLF) capacitance, Hill–Coleman and conductance methods were used. The Nss values obtained from these methods are in agreement with each other. Furthermore, the effect of the series resistance (Rs) on admittance measurements was investigated. Thus, the obtained results suggest that the prepared structure can be used in various electronic applications. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Analysis of interface states in Au/ZnO/p-InP (MOS) structure

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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-018-9371-y
Publisher site
See Article on Publisher Site

Abstract

Zinc oxide (ZnO) film was deposited on p-type InP substrate by means of radio frequency magnetron sputtering technique and thus the Au/ZnO/p-InP (MOS) structure was fabricated. The crystal structure and surface morphology of ZnO film deposited on InP were characterized by X-ray diffraction and atomic force microscopy, respectively. The analysis of interface states of the structure is studied using admittance (Y = G + iωC) measurements at room temperature. It is observed that the capacitance and conductance measurements change with frequency. This change is attributed to the presence of interface states. To determine the interface state density (Nss), the high-low frequency (CHF–CLF) capacitance, Hill–Coleman and conductance methods were used. The Nss values obtained from these methods are in agreement with each other. Furthermore, the effect of the series resistance (Rs) on admittance measurements was investigated. Thus, the obtained results suggest that the prepared structure can be used in various electronic applications.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 29, 2018

References

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