A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch

A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch In this work, a novel GaN-based reverse blocking metal–insulator–semiconductor high electron mobility transistor (RB-MISHEMT) with enhancement mode (E-mode) is investigated by the TCAD simulation. To enable the device with capability of blocking reverse current, a MIS field-effect drain consisting of electrically shorted ohmic and recessed MIS structure is adopted. The proposed GaN E-mode RB-MISHEMT features a low reverse current of 10 $$\upmu $$ μ A at − 900 V and a low turn-on voltage of drain electrode of 0.38 V at 10 mA. On-state power loss of the bidirectional switch based on proposed GaN E-mode RB-MISHEMT shows a 34% reduction compared with that of the bidirectional switch based on GaN E-mode reverse conducting MISHEMT. And the proposed E-mode RB-MISHEMT is also compatible with standard E-mode MISHEMT. The high performance and processing compatibility of the proposed GaN RB-MISHEMT show that the device is promising for future power applications. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1079-3
Publisher site
See Article on Publisher Site

Abstract

In this work, a novel GaN-based reverse blocking metal–insulator–semiconductor high electron mobility transistor (RB-MISHEMT) with enhancement mode (E-mode) is investigated by the TCAD simulation. To enable the device with capability of blocking reverse current, a MIS field-effect drain consisting of electrically shorted ohmic and recessed MIS structure is adopted. The proposed GaN E-mode RB-MISHEMT features a low reverse current of 10 $$\upmu $$ μ A at − 900 V and a low turn-on voltage of drain electrode of 0.38 V at 10 mA. On-state power loss of the bidirectional switch based on proposed GaN E-mode RB-MISHEMT shows a 34% reduction compared with that of the bidirectional switch based on GaN E-mode reverse conducting MISHEMT. And the proposed E-mode RB-MISHEMT is also compatible with standard E-mode MISHEMT. The high performance and processing compatibility of the proposed GaN RB-MISHEMT show that the device is promising for future power applications.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Oct 3, 2017

References

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