In this work, a novel GaN-based reverse blocking metal–insulator–semiconductor high electron mobility transistor (RB-MISHEMT) with enhancement mode (E-mode) is investigated by the TCAD simulation. To enable the device with capability of blocking reverse current, a MIS field-effect drain consisting of electrically shorted ohmic and recessed MIS structure is adopted. The proposed GaN E-mode RB-MISHEMT features a low reverse current of 10 $$\upmu $$ μ A at − 900 V and a low turn-on voltage of drain electrode of 0.38 V at 10 mA. On-state power loss of the bidirectional switch based on proposed GaN E-mode RB-MISHEMT shows a 34% reduction compared with that of the bidirectional switch based on GaN E-mode reverse conducting MISHEMT. And the proposed E-mode RB-MISHEMT is also compatible with standard E-mode MISHEMT. The high performance and processing compatibility of the proposed GaN RB-MISHEMT show that the device is promising for future power applications.
Journal of Computational Electronics – Springer Journals
Published: Oct 3, 2017
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