A highly sensitive and fast graphene nanoribbon/CsPbBr3 quantum dot phototransistor with enhanced vertical metal oxide heterostructuresElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr02384k

A highly sensitive and fast graphene nanoribbon/CsPbBr3 quantum dot phototransistor with enhanced... Although recent breakthroughs in reported graphene-based phototransistors with embedded quantum dots (QDs) have definitely been astonishing, there are still some obstacles in their practical use with regard to their electrical and optical performances. We show that through optimization of the vertical graphene nanoribbon (GNR)/QD/IGZO heterostructure and the ultrahigh efficiency of CsPbBr3 QDs, it is possible to significantly increase the on/off ratio (>103), the subthreshold slope (S.S., 0.9 V dec1), the device's field effect mobility (FET, 13 cm1 V1 S1) and other electrical properties. Subsequently, on the basis of the extra opticalelectrical characterization, we attribute the enhanced photosensitivity (800), the accelerated detecting speed (141 s) and the high detectivity (7.5 1014 cm Hz1/2 W1) to the vertical heterostructure associated with the optimized GNR component. To further demonstrate this enhancement phenomenon, the mechanism and theory mode of this vertical heterostructure are analyzed and exploited in this letter. This research indicates that a highly sensitive and fast phototransistor can be realized using the novel GNR/QD/IGZO vertical heterostructure and the long diffusion length of the perovskite QD photosensing component. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nanoscale Royal Society of Chemistry

A highly sensitive and fast graphene nanoribbon/CsPbBr3 quantum dot phototransistor with enhanced vertical metal oxide heterostructuresElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr02384k

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Publisher
The Royal Society of Chemistry
Copyright
This journal is © The Royal Society of Chemistry
ISSN
2040-3364
D.O.I.
10.1039/c8nr02384k
Publisher site
See Article on Publisher Site

Abstract

Although recent breakthroughs in reported graphene-based phototransistors with embedded quantum dots (QDs) have definitely been astonishing, there are still some obstacles in their practical use with regard to their electrical and optical performances. We show that through optimization of the vertical graphene nanoribbon (GNR)/QD/IGZO heterostructure and the ultrahigh efficiency of CsPbBr3 QDs, it is possible to significantly increase the on/off ratio (>103), the subthreshold slope (S.S., 0.9 V dec1), the device's field effect mobility (FET, 13 cm1 V1 S1) and other electrical properties. Subsequently, on the basis of the extra opticalelectrical characterization, we attribute the enhanced photosensitivity (800), the accelerated detecting speed (141 s) and the high detectivity (7.5 1014 cm Hz1/2 W1) to the vertical heterostructure associated with the optimized GNR component. To further demonstrate this enhancement phenomenon, the mechanism and theory mode of this vertical heterostructure are analyzed and exploited in this letter. This research indicates that a highly sensitive and fast phototransistor can be realized using the novel GNR/QD/IGZO vertical heterostructure and the long diffusion length of the perovskite QD photosensing component.

Journal

NanoscaleRoyal Society of Chemistry

Published: May 22, 2018

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