Sulphur doping: a facile approach to tune the electronic structure and optical properties of graphene quantum dots

Sulphur doping: a facile approach to tune the electronic structure and optical properties of... Sulphur-doped carbon-based materials have attracted a great deal of interest because of their important applications in the fields of oxygen reduction reactions, hydrogen storage, supercapacitors, photocatalysts and lithium ion batteries. Here, we report a new member of sulphur-doped carbon-based materials, i.e. sulphur doped graphene quantum dots (S-GQDs). The S-GQDs were prepared by a hydrothermal method using fructose and sulphuric acid as source materials. Absorption and photoluminescence investigations show that inter-band crossings are responsible for the observed multiple emission peaks. The incorporation of ∼1 at% of S into the quantum dots can effectively modify the electronic structure of the S-GQDs by introducing S-related energy levels between π and π* of C. The additional energy levels in the S-GQDs lead to efficient and multiple emission peaks. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nanoscale Royal Society of Chemistry

Sulphur doping: a facile approach to tune the electronic structure and optical properties of graphene quantum dots

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Publisher
Royal Society of Chemistry
Copyright
This journal is © the Partner Organisations 2014
ISSN
2040-3364
eISSN
2040-3372
D.O.I.
10.1039/c4nr00693c
Publisher site
See Article on Publisher Site

Abstract

Sulphur-doped carbon-based materials have attracted a great deal of interest because of their important applications in the fields of oxygen reduction reactions, hydrogen storage, supercapacitors, photocatalysts and lithium ion batteries. Here, we report a new member of sulphur-doped carbon-based materials, i.e. sulphur doped graphene quantum dots (S-GQDs). The S-GQDs were prepared by a hydrothermal method using fructose and sulphuric acid as source materials. Absorption and photoluminescence investigations show that inter-band crossings are responsible for the observed multiple emission peaks. The incorporation of ∼1 at% of S into the quantum dots can effectively modify the electronic structure of the S-GQDs by introducing S-related energy levels between π and π* of C. The additional energy levels in the S-GQDs lead to efficient and multiple emission peaks.

Journal

NanoscaleRoyal Society of Chemistry

Published: Mar 1, 2014

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