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General rules for selective growth of enriched semiconducting single walled carbon nanotubes with water vapor as in situ etchant.

General rules for selective growth of enriched semiconducting single walled carbon nanotubes with... The presence of metallic nanotubes in as-grown single walled carbon nanotubes (SWNTs) is the major bottleneck for their applications in field-effect transistors. Herein, we present a method to synthesize enriched, semiconducting nanotube arrays on quartz substrate. It was discovered that introducing appropriate amounts of water could effectively remove the metallic nanotubes and significantly enhance the density of SWNT arrays. More importantly, we proposed and confirmed that the high growth selectivity originates from the etching effect of water and the difference in the chemical reactivities of metallic and semiconducting nanotubes. Three important rules were summarized for achieving a high selectivity in growing semiconducting nanotubes by systematically investigating the relationship among water concentration, carbon feeding rate, and the percentage of semiconducting nanotubes in the produced SWNT arrays. Furthermore, these three rules can be applied to the growth of random SWNT networks on silicon wafers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of the American Chemical Society Pubmed

General rules for selective growth of enriched semiconducting single walled carbon nanotubes with water vapor as in situ etchant.

Journal of the American Chemical Society , Volume 134 (34): -13992 – Jan 7, 2013

General rules for selective growth of enriched semiconducting single walled carbon nanotubes with water vapor as in situ etchant.


Abstract

The presence of metallic nanotubes in as-grown single walled carbon nanotubes (SWNTs) is the major bottleneck for their applications in field-effect transistors. Herein, we present a method to synthesize enriched, semiconducting nanotube arrays on quartz substrate. It was discovered that introducing appropriate amounts of water could effectively remove the metallic nanotubes and significantly enhance the density of SWNT arrays. More importantly, we proposed and confirmed that the high growth selectivity originates from the etching effect of water and the difference in the chemical reactivities of metallic and semiconducting nanotubes. Three important rules were summarized for achieving a high selectivity in growing semiconducting nanotubes by systematically investigating the relationship among water concentration, carbon feeding rate, and the percentage of semiconducting nanotubes in the produced SWNT arrays. Furthermore, these three rules can be applied to the growth of random SWNT networks on silicon wafers.

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ISSN
0002-7863
DOI
10.1021/ja3038992
pmid
22873685

Abstract

The presence of metallic nanotubes in as-grown single walled carbon nanotubes (SWNTs) is the major bottleneck for their applications in field-effect transistors. Herein, we present a method to synthesize enriched, semiconducting nanotube arrays on quartz substrate. It was discovered that introducing appropriate amounts of water could effectively remove the metallic nanotubes and significantly enhance the density of SWNT arrays. More importantly, we proposed and confirmed that the high growth selectivity originates from the etching effect of water and the difference in the chemical reactivities of metallic and semiconducting nanotubes. Three important rules were summarized for achieving a high selectivity in growing semiconducting nanotubes by systematically investigating the relationship among water concentration, carbon feeding rate, and the percentage of semiconducting nanotubes in the produced SWNT arrays. Furthermore, these three rules can be applied to the growth of random SWNT networks on silicon wafers.

Journal

Journal of the American Chemical SocietyPubmed

Published: Jan 7, 2013

There are no references for this article.