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X‐ray diffraction studies of Al x Ga 1− x N (0≤ x ≤1) ternary alloys grown on sapphire substrate

X‐ray diffraction studies of Al x Ga 1− x N (0≤ x ≤1) ternary alloys grown on sapphire substrate Purpose – The purpose of this paper is to report the structural properties of Al x Ga 1− x N (0≤ x ≤1) grown on sapphire substrate by means of X‐ray diffraction (XRD) technique. The main purpose of this work was to investigate the effects of Al( x ) composition to the structural and microstructural properties of Al x Ga 1− x N ternary alloy such as the crystalline quality, crystalline structure and lattice constant c . Design/methodology/approach – Al x Ga 1− x N thin films with wurtzite structure in the composition range of 0≤ x ≤1 are used in this study. The compositions of the samples are calculated using Vegard's law and verified by energy dispersive X‐ray analysis. The samples are then characterized by means of XRD rocking curve (RC) and phase analysis. Findings – Investigation revealed that the full width half maximum (FWHM) of RC increase with the increase x value. This indicates that the crystalline quality of the samples deteriorate with the increase of Al compositions. The best fit of the non‐linear interpolation of the FWHM of the (002) diffraction RC data suggested that a maximum disorder should be expected in this mixed crystals system when the composition x ≈45 percent. Originality/value – This paper provides valuable information on the effect of Al compositions to the structural characteristics of Al x Ga 1− x N alloy system. The availability of information about maximum disorder of Al composition in Al x Ga 1− x N (0≤ x ≤1) alloy system provides useful reference in device fabrications where researchers are able to choose correct alloy composition in order to fabricate good quality devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

X‐ray diffraction studies of Al x Ga 1− x N (0≤ x ≤1) ternary alloys grown on sapphire substrate

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Publisher
Emerald Publishing
Copyright
Copyright © 2011 Emerald Group Publishing Limited. All rights reserved.
ISSN
1356-5362
DOI
10.1108/13565361111127359
Publisher site
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Abstract

Purpose – The purpose of this paper is to report the structural properties of Al x Ga 1− x N (0≤ x ≤1) grown on sapphire substrate by means of X‐ray diffraction (XRD) technique. The main purpose of this work was to investigate the effects of Al( x ) composition to the structural and microstructural properties of Al x Ga 1− x N ternary alloy such as the crystalline quality, crystalline structure and lattice constant c . Design/methodology/approach – Al x Ga 1− x N thin films with wurtzite structure in the composition range of 0≤ x ≤1 are used in this study. The compositions of the samples are calculated using Vegard's law and verified by energy dispersive X‐ray analysis. The samples are then characterized by means of XRD rocking curve (RC) and phase analysis. Findings – Investigation revealed that the full width half maximum (FWHM) of RC increase with the increase x value. This indicates that the crystalline quality of the samples deteriorate with the increase of Al compositions. The best fit of the non‐linear interpolation of the FWHM of the (002) diffraction RC data suggested that a maximum disorder should be expected in this mixed crystals system when the composition x ≈45 percent. Originality/value – This paper provides valuable information on the effect of Al compositions to the structural characteristics of Al x Ga 1− x N alloy system. The availability of information about maximum disorder of Al composition in Al x Ga 1− x N (0≤ x ≤1) alloy system provides useful reference in device fabrications where researchers are able to choose correct alloy composition in order to fabricate good quality devices.

Journal

Microelectronics International – Emerald Publishing

Published: May 10, 2011

Keywords: X‐ray analysis; Alloys; Thin films; Crystallization

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