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Purpose Ultrafine feature sizes and highperformance requirements have necessitated the integration of lowk dielectrics with siliconlevel interconnects. These are mechanically weaker than previousgeneration materials, a fact that has been recognized to be an industry wide issue. The inherently weaker nature of the lowk dielectric material can pose significant challenges to downstream electronicpackaging processes and materials. The purpose of this paper is to focus on the wire bonding of gold wires on a Culowk pad structure.Designmethodologyapproach The paper presents a numerical model description and simulation procedure.Findings Numerical methods, particularly finite element method based simulations are a good tool to visualize and understand the reasons for success or failure during a bonding process. It enables one to relate the induced stress to the inherent bulk material's strength and interfacial strength. The results from such simulations clearly indicate the highstress locations and the amount of plastic strain that accumulates during the application of compressive force, heat and ultrasonic energy.Originalityvalue These simulations help to understand the device's weaknesses and correlate the failures so as to design the wire bonder equipment with better process control features.
Microelectronics International – Emerald Publishing
Published: Dec 28, 2007
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