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References (1)
-
M. Hayama (1990)
Characteristics of p-i junction amorphous silicon stripe-type photodiode array and its application to contact image sensorIEEE Transactions on Electron Devices, 37
- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 1356-5362
- DOI
- 10.1108/eb044453
- Publisher site
- See Article on Publisher Site
Abstract
To obtain the best moistureproof and most reliable protective coating for an amorphous silicon image sensor A4 documents, three methods of coating and patterning processes and 15 types of resin classified into five kinds of materials were evaluated. Through this study, a screenprinting method using silicone resin material cured under conditions of 150C for 60 minutes to form a 60 m thick protective coating film was selected because of the simplicity of its fabrication process compared with the other two methods. The aSi photodiodes were tested under conditions of 121C2 atm. for 300 hours, 30C to 100C for 350 cycles and 85C for 500 hours, and their characteristics were not negatively affected.
Journal
Microelectronics International – Emerald Publishing
Published: Mar 1, 1991