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Analysis and simulation of semiconductor devices
- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 0332-1649
- DOI
- 10.1108/eb010094
- Publisher site
- See Article on Publisher Site
Abstract
An efficient numerical method for the solution of hotcarrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional driftdiffusion model.
Journal
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Feb 1, 1992