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Thin films of (TeO 2 ) 1− x (In 2 O 3 ) x as gamma radiation sensors

Thin films of (TeO 2 ) 1− x (In 2 O 3 ) x as gamma radiation sensors Thin films of tellurium dioxide (TeO 2 ) and indium oxide (In 2 O 3 ) mixtures were investigated for γ‐radiation dosimetry purpose. Samples were fabricated using thermal vacuum evaporation technique. The electrical properties of mixed oxides thin films ((TeO 2 ) 1− x (In 2 O 3 ) x , where x =0 and 10 per cent by weight) and their changes under the influence of γ‐radiation were investigated. Samples with contacts having a planar structure showed increase in the values of current with the increase in radiation dose up to a certain dose level. Thin films in the form of pn‐junctions were fabricated with (TeO 2 ) 1− x (In 2 O 3 ) x as p‐type material and sulphur as n‐type material. These pn‐junctions exhibited Zener diode behaviour. The current‐voltage characteristics for as‐deposited and γ‐irradiated samples were recorded. The level of response for all the fabricated devices was found to be highly dependent on the composition of the exposed material. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Sensor Review Emerald Publishing

Thin films of (TeO 2 ) 1− x (In 2 O 3 ) x as gamma radiation sensors

Sensor Review , Volume 23 (1): 7 – Mar 1, 2003

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References (29)

Publisher
Emerald Publishing
Copyright
Copyright © 2003 MCB UP Ltd. All rights reserved.
ISSN
0260-2288
DOI
10.1108/02602280310457965
Publisher site
See Article on Publisher Site

Abstract

Thin films of tellurium dioxide (TeO 2 ) and indium oxide (In 2 O 3 ) mixtures were investigated for γ‐radiation dosimetry purpose. Samples were fabricated using thermal vacuum evaporation technique. The electrical properties of mixed oxides thin films ((TeO 2 ) 1− x (In 2 O 3 ) x , where x =0 and 10 per cent by weight) and their changes under the influence of γ‐radiation were investigated. Samples with contacts having a planar structure showed increase in the values of current with the increase in radiation dose up to a certain dose level. Thin films in the form of pn‐junctions were fabricated with (TeO 2 ) 1− x (In 2 O 3 ) x as p‐type material and sulphur as n‐type material. These pn‐junctions exhibited Zener diode behaviour. The current‐voltage characteristics for as‐deposited and γ‐irradiated samples were recorded. The level of response for all the fabricated devices was found to be highly dependent on the composition of the exposed material.

Journal

Sensor ReviewEmerald Publishing

Published: Mar 1, 2003

Keywords: Radiation; Structures; Thin film

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