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The novel structural design for pressure sensors

The novel structural design for pressure sensors Purpose – The purpose of this paper is to investigate the disadvantages of traditional sensors and establish a new structure for pressure measurement. Design/methodology/approach – A kind of novel piezoresistive micro‐pressure sensor with a cross‐beam membrane (CBM) structure is designed based on the silicon substrate. Through analyzing the stress distribution of the new structure by finite element method, the model of structure is established and compared with traditional structures. The fabrication is operated on silicon wafer, which applies the technology of anisotropy chemical etching and inductively coupled plasma. Findings – Compared to the traditional C‐ and E‐type structures, this new CBM structure has the advantages of low nonlinearity and high sensitivities by the cross‐beam on the membrane, which cause the stress is more concentrated in sensitive area and the deflections that relate to the linearity are decreased. Originality/value – The paper provides the first empirical reports on the new piezoresistive structure for the pressure measurement by fabricating a cross‐beam on the membrane and resolving the conflict of nonlinearity and sensitivity of the piezoresistive sensors. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Sensor Review Emerald Publishing

The novel structural design for pressure sensors

Sensor Review , Volume 30 (4): 9 – Sep 14, 2010

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References (12)

Publisher
Emerald Publishing
Copyright
Copyright © 2010 Emerald Group Publishing Limited. All rights reserved.
ISSN
0260-2288
DOI
10.1108/02602281011072189
Publisher site
See Article on Publisher Site

Abstract

Purpose – The purpose of this paper is to investigate the disadvantages of traditional sensors and establish a new structure for pressure measurement. Design/methodology/approach – A kind of novel piezoresistive micro‐pressure sensor with a cross‐beam membrane (CBM) structure is designed based on the silicon substrate. Through analyzing the stress distribution of the new structure by finite element method, the model of structure is established and compared with traditional structures. The fabrication is operated on silicon wafer, which applies the technology of anisotropy chemical etching and inductively coupled plasma. Findings – Compared to the traditional C‐ and E‐type structures, this new CBM structure has the advantages of low nonlinearity and high sensitivities by the cross‐beam on the membrane, which cause the stress is more concentrated in sensitive area and the deflections that relate to the linearity are decreased. Originality/value – The paper provides the first empirical reports on the new piezoresistive structure for the pressure measurement by fabricating a cross‐beam on the membrane and resolving the conflict of nonlinearity and sensitivity of the piezoresistive sensors.

Journal

Sensor ReviewEmerald Publishing

Published: Sep 14, 2010

Keywords: Sensors; Pressure; Finite element analysis; Dielectric properties

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