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References (8)
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G. Hobler, H. Pötzl, L. Palmetshofer, R. Schork, J. Lorenz, C. Tian, S. Gara, G. Stingeder (1991)
AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICONCompel-the International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 10
- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 0332-1649
- DOI
- 10.1108/eb010101
- Publisher site
- See Article on Publisher Site
Abstract
The effect of a screening oxide layer on 1D and 2D ion implantation profiles in silicon is investigated using Monte Carlo simulations. Experimental observations of profile broadening by oxide layers are explained by the fact that atoms at lattice positions are less effective in steering ions into channels than atoms at random positions. The influence of the oxide layer on the lateral penetration below a mask is discussed in terms of implantation energy and ion species. A new set of parameters for the electronic stopping of phosphorus and arsenic in silicon is used.
Journal
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1992