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THE EFFECT OF A SCREENING OXIDE ON ION IMPLANTATION STUDIED BY MONTE CARLO SIMULATIONS

THE EFFECT OF A SCREENING OXIDE ON ION IMPLANTATION STUDIED BY MONTE CARLO SIMULATIONS The effect of a screening oxide layer on 1D and 2D ion implantation profiles in silicon is investigated using Monte Carlo simulations. Experimental observations of profile broadening by oxide layers are explained by the fact that atoms at lattice positions are less effective in steering ions into channels than atoms at random positions. The influence of the oxide layer on the lateral penetration below a mask is discussed in terms of implantation energy and ion species. A new set of parameters for the electronic stopping of phosphorus and arsenic in silicon is used. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

THE EFFECT OF A SCREENING OXIDE ON ION IMPLANTATION STUDIED BY MONTE CARLO SIMULATIONS

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb010101
Publisher site
See Article on Publisher Site

Abstract

The effect of a screening oxide layer on 1D and 2D ion implantation profiles in silicon is investigated using Monte Carlo simulations. Experimental observations of profile broadening by oxide layers are explained by the fact that atoms at lattice positions are less effective in steering ions into channels than atoms at random positions. The influence of the oxide layer on the lateral penetration below a mask is discussed in terms of implantation energy and ion species. A new set of parameters for the electronic stopping of phosphorus and arsenic in silicon is used.

Journal

COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Apr 1, 1992

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