Tape casting and properties of Pr 2 O 3 ‐doped ZnO multilayer varistors

Tape casting and properties of Pr 2 O 3 ‐doped ZnO multilayer varistors Purpose – This paper aims to fabricate and characterize ZnO‐based multilayer varistors. Design/methodology/approach – Tape casting technique was utilized for preparation of multilayer varistors based on ZnO doped with Pr, Bi, Sb, Co, Cr, Mn and Si oxides. Scanning electron microscope (SEM), energy‐dispersive X‐ray spectroscopy (EDS) and X‐ray diffraction (XRD) methods were used to study the microstructure, elemental and phase compositions, respectively, of the varistors. Dielectric properties were investigated by impedance spectroscopy. Current–voltage (I–U) dependences were measured to characterize nonlinear behavior of the fabricated varistors. Findings – XRD, SEM and EDS studies revealed dense microstructure of ceramic layers with ZnO grains sized 1‐4 μm surrounded by nanometric Bi‐rich films, submicrometer Zn 7 Sb 2 O 12 spinel grains and needle‐shaped Pr 3 SbO 7 crystallites. Praseodymium oxide was found to be very effective as an additive restricting the ZnO grain growth. I–U characteristics of the fabricated multilayer varistors were nonlinear, with the nonlinearity coefficients of 23‐27 and 19‐51 for the lower and higher Pr 2 O 3 content, respectively. The breakdown voltages were 60‐150 V, decreasing with increasing sintering temperature. Originality/value – Low‐temperature cofired ceramics technology enables attaining a significant progress in miniaturization of electronic passive components. Literature concerning application of this technology for multilayer varistors fabrication is limited. In the present work, the results of XRD, SEM and EDS studies along with the I–U and complex impedance dependences are analyzed to elucidate the origin of the observed varistor effect. The influence of sintering temperature and Pr 2 O 3 ‐doping level was investigated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Tape casting and properties of Pr 2 O 3 ‐doped ZnO multilayer varistors

Microelectronics International, Volume 31 (3): 6 – Jul 29, 2014

Loading next page...
 
/lp/emerald-publishing/tape-casting-and-properties-of-pr-2-o-3-doped-zno-multilayer-varistors-jffytO7aef
Publisher
Emerald Publishing
Copyright
Copyright © 2014 Emerald Group Publishing Limited. All rights reserved.
ISSN
1356-5362
DOI
10.1108/MI-11-2013-0059
Publisher site
See Article on Publisher Site

Abstract

Purpose – This paper aims to fabricate and characterize ZnO‐based multilayer varistors. Design/methodology/approach – Tape casting technique was utilized for preparation of multilayer varistors based on ZnO doped with Pr, Bi, Sb, Co, Cr, Mn and Si oxides. Scanning electron microscope (SEM), energy‐dispersive X‐ray spectroscopy (EDS) and X‐ray diffraction (XRD) methods were used to study the microstructure, elemental and phase compositions, respectively, of the varistors. Dielectric properties were investigated by impedance spectroscopy. Current–voltage (I–U) dependences were measured to characterize nonlinear behavior of the fabricated varistors. Findings – XRD, SEM and EDS studies revealed dense microstructure of ceramic layers with ZnO grains sized 1‐4 μm surrounded by nanometric Bi‐rich films, submicrometer Zn 7 Sb 2 O 12 spinel grains and needle‐shaped Pr 3 SbO 7 crystallites. Praseodymium oxide was found to be very effective as an additive restricting the ZnO grain growth. I–U characteristics of the fabricated multilayer varistors were nonlinear, with the nonlinearity coefficients of 23‐27 and 19‐51 for the lower and higher Pr 2 O 3 content, respectively. The breakdown voltages were 60‐150 V, decreasing with increasing sintering temperature. Originality/value – Low‐temperature cofired ceramics technology enables attaining a significant progress in miniaturization of electronic passive components. Literature concerning application of this technology for multilayer varistors fabrication is limited. In the present work, the results of XRD, SEM and EDS studies along with the I–U and complex impedance dependences are analyzed to elucidate the origin of the observed varistor effect. The influence of sintering temperature and Pr 2 O 3 ‐doping level was investigated.

Journal

Microelectronics InternationalEmerald Publishing

Published: Jul 29, 2014

Keywords: Ceramics; Thick/thin film technology; LTCC; Multilayer varistors; Tape casting

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create folders to
organize your research

Export folders, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off