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Study of I‐V characteristics of ZnO film on Si substrate with Ag buffer layer by C‐AFM

Study of I‐V characteristics of ZnO film on Si substrate with Ag buffer layer by C‐AFM Purpose – The purpose of this paper is to demonstrate the I‐V characteristics of ZnO film on Si substrates with Ag buffer layer by conductive atomic force (C‐AFM). Design/methodology/approach – An Ag buffer layer and Zn film was first deposited on silicon substrate by RF‐sputtering deposition method from high pure Ag and Zn target, respectively. Then, the deposited film was sintered in air at 500°C for 1 h. Findings – The structures and morphologies of the prepared films were characterized by X‐ray diffraction (XRD), energy dispersive spectrum (EDS), atomic force microscopy (AFM), and C‐AFM. The results show that the prepared ZnO films with Ag buffer layer have a good crystallinity and surface morphology. Interestingly, the I‐V curve of ZnO film exhibited typical characteristics of semi‐conductive oxide under the conductive Ag buffer layer. Originality/value – The paper demonstrates, by C‐AFM, that the ZnO/Ag‐buffer/Si exhibits excellent crystal structure, morphology and typical I‐V characteristics. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Study of I‐V characteristics of ZnO film on Si substrate with Ag buffer layer by C‐AFM

Yidong Zhang; Weiwei He
Microelectronics International , Volume 29 (1): 5 – Jan 20, 2012
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Publisher
Emerald Publishing
Copyright
Copyright © 2012 Emerald Group Publishing Limited. All rights reserved.
ISSN
1356-5362
DOI
10.1108/13565361211219149
Publisher site
See Article on Publisher Site

Abstract

Purpose – The purpose of this paper is to demonstrate the I‐V characteristics of ZnO film on Si substrates with Ag buffer layer by conductive atomic force (C‐AFM). Design/methodology/approach – An Ag buffer layer and Zn film was first deposited on silicon substrate by RF‐sputtering deposition method from high pure Ag and Zn target, respectively. Then, the deposited film was sintered in air at 500°C for 1 h. Findings – The structures and morphologies of the prepared films were characterized by X‐ray diffraction (XRD), energy dispersive spectrum (EDS), atomic force microscopy (AFM), and C‐AFM. The results show that the prepared ZnO films with Ag buffer layer have a good crystallinity and surface morphology. Interestingly, the I‐V curve of ZnO film exhibited typical characteristics of semi‐conductive oxide under the conductive Ag buffer layer. Originality/value – The paper demonstrates, by C‐AFM, that the ZnO/Ag‐buffer/Si exhibits excellent crystal structure, morphology and typical I‐V characteristics.

Journal

Microelectronics International – Emerald Publishing

Published: Jan 20, 2012

Keywords: Films (states of matter); Electric current; Voltage; Substrates; ZnO film; Ag buffer layer; Silicon substrate; I‐V curves

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