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Structural and electrical study of BLT thin film deposited on different substrates by electron gun evaporation

Structural and electrical study of BLT thin film deposited on different substrates by electron... The purpose of this study was to deposit Bi4Ti3O12 films by electron gun evaporation technique starting from Bi3.25La0.75Ti3O12 as a target without annealing. The films have been deposited on Si(100), on thin film buffer layer of Pt and glass substrates. X-ray diffraction (XRD) was used to analyze structure of the films, which possesses a good structure with (0010) preferred orientation. Electronic behavior of the samples has been studied.Design/methodology/approachThe dependence of both the structure and quality of the BLT thin films on different substrates is studied using XRD. The electrical characteristics were determined using capacitance–voltage (C–V) and current–voltage (I–V) measurements at the frequency of 1 MHz. Optical properties of the grown films deposited on glass substrates were characterized by optical transmittance measurements (UV-Vis).FindingsThe XRD analysis approved the crystallographer structure of the prepared Bi4Ti3O12 films. The optical properties of deposited film (transmittance and the band gap value) are extracted by UV-Vis spectrum.Originality/valueHigh crystalline quality Bi4Ti3O12 films have been obtained using different substrates at room temperature by means of electron gun deposition. The electrical and ferroelectric properties of thin films were studied using I–V and C–V measurements. The band gap has been found to be about 3.62 eV for the studied film deposited on glass substrate. Electron beam evaporation technique is the most interesting methods, once considering many advantages; such as its stability, reproducibility, high deposition rate and the compositions of the films are controlled. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png World Journal of Engineering Emerald Publishing

Structural and electrical study of BLT thin film deposited on different substrates by electron gun evaporation

Abdallah, B.; Nasrallah, F.; Tabbky, W.
World Journal of Engineering , Volume 19 (6): 6 – Dec 5, 2022
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Publisher
Emerald Publishing
Copyright
© Emerald Publishing Limited
ISSN
1708-5284
DOI
10.1108/wje-06-2020-0200
Publisher site
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Abstract

The purpose of this study was to deposit Bi4Ti3O12 films by electron gun evaporation technique starting from Bi3.25La0.75Ti3O12 as a target without annealing. The films have been deposited on Si(100), on thin film buffer layer of Pt and glass substrates. X-ray diffraction (XRD) was used to analyze structure of the films, which possesses a good structure with (0010) preferred orientation. Electronic behavior of the samples has been studied.Design/methodology/approachThe dependence of both the structure and quality of the BLT thin films on different substrates is studied using XRD. The electrical characteristics were determined using capacitance–voltage (C–V) and current–voltage (I–V) measurements at the frequency of 1 MHz. Optical properties of the grown films deposited on glass substrates were characterized by optical transmittance measurements (UV-Vis).FindingsThe XRD analysis approved the crystallographer structure of the prepared Bi4Ti3O12 films. The optical properties of deposited film (transmittance and the band gap value) are extracted by UV-Vis spectrum.Originality/valueHigh crystalline quality Bi4Ti3O12 films have been obtained using different substrates at room temperature by means of electron gun deposition. The electrical and ferroelectric properties of thin films were studied using I–V and C–V measurements. The band gap has been found to be about 3.62 eV for the studied film deposited on glass substrate. Electron beam evaporation technique is the most interesting methods, once considering many advantages; such as its stability, reproducibility, high deposition rate and the compositions of the films are controlled.

Journal

World Journal of Engineering – Emerald Publishing

Published: Dec 5, 2022

Keywords: BLT films; E-beam deposition; Structure; Optical properties; Electrical characteristics

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