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Stabilization network optimization of internally matched GaN HEMTs

Stabilization network optimization of internally matched GaN HEMTs Purpose – The purpose of this paper is to report on the stabilization network optimization of internally matched GaN high electron mobility transistors (HEMTs). Design/methodology/approach – The effects of the two stabilization networks on the characteristics of the device are discussed, such as the stability, power gain and output power. Findings – With the optimized stabilization network, the internally matched GaN HEMTs with 16‐mm gate width exhibited good stability and delivers a 46 dBm output power with 6.1 dB power gain under the continuous wave condition at 8 GHz. By using the optimized stabilization network, the package process of the large‐scale microwave power device of GaN HEMTs can be simplified. Originality/value – This paper provides useful information for the internally matched GaN HEMTs. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Stabilization network optimization of internally matched GaN HEMTs

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Publisher
Emerald Publishing
Copyright
Copyright © 2011 Emerald Group Publishing Limited. All rights reserved.
ISSN
1356-5362
DOI
10.1108/13565361111127331
Publisher site
See Article on Publisher Site

Abstract

Purpose – The purpose of this paper is to report on the stabilization network optimization of internally matched GaN high electron mobility transistors (HEMTs). Design/methodology/approach – The effects of the two stabilization networks on the characteristics of the device are discussed, such as the stability, power gain and output power. Findings – With the optimized stabilization network, the internally matched GaN HEMTs with 16‐mm gate width exhibited good stability and delivers a 46 dBm output power with 6.1 dB power gain under the continuous wave condition at 8 GHz. By using the optimized stabilization network, the package process of the large‐scale microwave power device of GaN HEMTs can be simplified. Originality/value – This paper provides useful information for the internally matched GaN HEMTs.

Journal

Microelectronics International – Emerald Publishing

Published: May 10, 2011

Keywords: Stability (control theory); Power transistors; Semiconductor devices

References

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    Colantonio, P.; Giannini, F.; Giofre, R.; Limit, E.; Serino, A.; Peroni, M.; Romanini, P.; Proietti, C.
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