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Purpose – The purpose of this paper is to report on the stabilization network optimization of internally matched GaN high electron mobility transistors (HEMTs). Design/methodology/approach – The effects of the two stabilization networks on the characteristics of the device are discussed, such as the stability, power gain and output power. Findings – With the optimized stabilization network, the internally matched GaN HEMTs with 16‐mm gate width exhibited good stability and delivers a 46 dBm output power with 6.1 dB power gain under the continuous wave condition at 8 GHz. By using the optimized stabilization network, the package process of the large‐scale microwave power device of GaN HEMTs can be simplified. Originality/value – This paper provides useful information for the internally matched GaN HEMTs.
Microelectronics International – Emerald Publishing
Published: May 10, 2011
Keywords: Stability (control theory); Power transistors; Semiconductor devices
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