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SIMULATION OF INTERFACE COUPLING EFFECTS IN ULTRATHIN SILICON ON INSULATOR MOSFET's

SIMULATION OF INTERFACE COUPLING EFFECTS IN ULTRATHIN SILICON ON INSULATOR MOSFET's Recent progress in silicononinsulator SOI technologies has made possible the fabrication of high quality ultrathin film structures. Preliminary research has demonstrated the advantage of fullydepleted SOI MOSFET's in term of speed and improved resistance to hot carrier degradation. The specific dualgate configuration of SOI transistors is schematically presented in Fig. 1a. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

SIMULATION OF INTERFACE COUPLING EFFECTS IN ULTRATHIN SILICON ON INSULATOR MOSFET's

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References (7)

Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb010111
Publisher site
See Article on Publisher Site

Abstract

Recent progress in silicononinsulator SOI technologies has made possible the fabrication of high quality ultrathin film structures. Preliminary research has demonstrated the advantage of fullydepleted SOI MOSFET's in term of speed and improved resistance to hot carrier degradation. The specific dualgate configuration of SOI transistors is schematically presented in Fig. 1a.

Journal

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Apr 1, 1992

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