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Silicon MOSFET devices electrical parameters evolution at high temperatures

Silicon MOSFET devices electrical parameters evolution at high temperatures Purpose The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.Designmethodologyapproach The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.Findings The temperature dependence of these parameters is investigated their evolution allows the evaluation of device's operation reliability in hightemperature environments.Originalityvalue The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Silicon MOSFET devices electrical parameters evolution at high temperatures

Salame, C.; Habchi, R.
Microelectronics International , Volume 25 (1): 4 – Dec 28, 2007
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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
1356-5362
DOI
10.1108/13565360810846608
Publisher site
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Abstract

Purpose The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.Designmethodologyapproach The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.Findings The temperature dependence of these parameters is investigated their evolution allows the evaluation of device's operation reliability in hightemperature environments.Originalityvalue The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.

Journal

Microelectronics International – Emerald Publishing

Published: Dec 28, 2007

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