SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS
SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS
Hecht, F.; Marrocco, A.; Caquot, E.; Filoche, M.
1991-04-01 00:00:00
Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques DouglasRachford with local time steps for the solution is presented in this paper. The formulation with electrostatic potential and quasiFermi levels n,p is used.
http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.pngCOMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishinghttp://www.deepdyve.com/lp/emerald-publishing/semiconductor-device-modelling-for-heterojunctions-structures-with-h6tEj00n7D
SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS
Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques DouglasRachford with local time steps for the solution is presented in this paper. The formulation with electrostatic potential and quasiFermi levels n,p is used.
Journal
COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering
– Emerald Publishing
Published: Apr 1, 1991
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