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SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS

SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques DouglasRachford with local time steps for the solution is presented in this paper. The formulation with electrostatic potential and quasiFermi levels n,p is used. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb051718
Publisher site
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Abstract

Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques DouglasRachford with local time steps for the solution is presented in this paper. The formulation with electrostatic potential and quasiFermi levels n,p is used.

Journal

COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing

Published: Apr 1, 1991

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