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Polyimide substrate textured by copper-seeding technique for enhanced light absorption in flexible black silicon

Polyimide substrate textured by copper-seeding technique for enhanced light absorption in... This paper aims to present investigation on textured polyimide (PI) substrate for enhanced light absorption in flexible black silicon (bSi).Design/methodology/approachFlexible bSi with thickness of 60 µm is used in this work. To texture the PI substrate, copper-seeding technique is used. A copper (Cu) layer with a thickness of 100 nm is deposited on PI substrate by sputtering. The substrate is then annealed at 400°C in air ambient for different durations of 60, 90 and 120 min.FindingsWith 90 min of annealing, root mean square roughness as large as 130 nm, peak angle of 24° and angle distribution of up to 87° are obtained. With this texturing condition, the flexible bSi exhibits maximum potential short-circuit current density (Jmax) of 40.33 mA/cm2, or 0.45 mA/cm2 higher compared to the flexible bSi on planar PI. The improvement is attributed to enhanced light scattering at the flexible bSi/textured PI interface. The findings from this work demonstrate that the optimization of the PI texturing via Cu-seeding process leads to an enhancement in the long wavelengths light absorption and potential Jmax in the flexible bSi absorber.Originality/valueDemonstrated enhanced light absorption and potential Jmax in flexible bSi on textured PI substrate (compared to planar PI substrate) by Cu-seeding with different annealing durations. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Polyimide substrate textured by copper-seeding technique for enhanced light absorption in flexible black silicon

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Publisher
Emerald Publishing
Copyright
© Emerald Publishing Limited
ISSN
1356-5362
eISSN
1356-5362
DOI
10.1108/mi-03-2022-0038
Publisher site
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Abstract

This paper aims to present investigation on textured polyimide (PI) substrate for enhanced light absorption in flexible black silicon (bSi).Design/methodology/approachFlexible bSi with thickness of 60 µm is used in this work. To texture the PI substrate, copper-seeding technique is used. A copper (Cu) layer with a thickness of 100 nm is deposited on PI substrate by sputtering. The substrate is then annealed at 400°C in air ambient for different durations of 60, 90 and 120 min.FindingsWith 90 min of annealing, root mean square roughness as large as 130 nm, peak angle of 24° and angle distribution of up to 87° are obtained. With this texturing condition, the flexible bSi exhibits maximum potential short-circuit current density (Jmax) of 40.33 mA/cm2, or 0.45 mA/cm2 higher compared to the flexible bSi on planar PI. The improvement is attributed to enhanced light scattering at the flexible bSi/textured PI interface. The findings from this work demonstrate that the optimization of the PI texturing via Cu-seeding process leads to an enhancement in the long wavelengths light absorption and potential Jmax in the flexible bSi absorber.Originality/valueDemonstrated enhanced light absorption and potential Jmax in flexible bSi on textured PI substrate (compared to planar PI substrate) by Cu-seeding with different annealing durations.

Journal

Microelectronics International – Emerald Publishing

Published: Jan 2, 2023

Keywords: Polyimide; Texturing; Absorption; Black silicon; MCCE

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