Access the full text.
Sign up today, get DeepDyve free for 14 days.
Developments in neutron detection technology during the past three years are reviewed with special emphasis on application to safety, security, or industrial development.An investigation about the possibility of using N‐channel power MOSFET (metal oxide semiconductor field effect transistor) as a high‐energy neutron sensitive detector is presented here. An empirical expression for neutron fluence detection is derived from the relation between neutron fluence and the evolution of the transistor current measured in the saturation region. This expression is valid for neutron fluence in the range 5×10 9 –1×10 14 n cm −2 .
Microelectronics International – Emerald Publishing
Published: Apr 1, 2002
Keywords: Semiconductors; Integrated circuits
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.