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N‐channel power MOSFET for fast neutron detection

N‐channel power MOSFET for fast neutron detection Developments in neutron detection technology during the past three years are reviewed with special emphasis on application to safety, security, or industrial development.An investigation about the possibility of using N‐channel power MOSFET (metal oxide semiconductor field effect transistor) as a high‐energy neutron sensitive detector is presented here. An empirical expression for neutron fluence detection is derived from the relation between neutron fluence and the evolution of the transistor current measured in the saturation region. This expression is valid for neutron fluence in the range 5×10 9 –1×10 14 n cm −2 . http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

N‐channel power MOSFET for fast neutron detection

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Publisher
Emerald Publishing
Copyright
Copyright © 2002 MCB UP Ltd. All rights reserved.
ISSN
1356-5362
DOI
10.1108/13565360210417745
Publisher site
See Article on Publisher Site

Abstract

Developments in neutron detection technology during the past three years are reviewed with special emphasis on application to safety, security, or industrial development.An investigation about the possibility of using N‐channel power MOSFET (metal oxide semiconductor field effect transistor) as a high‐energy neutron sensitive detector is presented here. An empirical expression for neutron fluence detection is derived from the relation between neutron fluence and the evolution of the transistor current measured in the saturation region. This expression is valid for neutron fluence in the range 5×10 9 –1×10 14 n cm −2 .

Journal

Microelectronics International – Emerald Publishing

Published: Apr 1, 2002

Keywords: Semiconductors; Integrated circuits

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