Intrinsic highfrequency oscillations 2.5 THz in current and corresponding quantum well density, which have been simulated for a fixed bias voltage in the Negative Differential Resistance NDR region of the CurrentVoltage IV characteristics of a Resonant Tunneling Diode RTD, suggest an equivalent nonlinear autonomous circuit model. The intrinsic circuit parameters are calculated directly from the results of the quantum transport numerical simulations. These consist of a resistor in series with a twobranch parallel circuit, one branch consists of a capacitor and the other branch consists of an inductor in series with a nonlinear resistor. It is however suggested that much more complex external circuitinduced behavior can occur in real RTD experiments.
COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1991
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