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INTRINSIC HIGHFREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF RESONANT TUNNELING DEVICES

INTRINSIC HIGHFREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL... Intrinsic highfrequency oscillations 2.5 THz in current and corresponding quantum well density, which have been simulated for a fixed bias voltage in the Negative Differential Resistance NDR region of the CurrentVoltage IV characteristics of a Resonant Tunneling Diode RTD, suggest an equivalent nonlinear autonomous circuit model. The intrinsic circuit parameters are calculated directly from the results of the quantum transport numerical simulations. These consist of a resistor in series with a twobranch parallel circuit, one branch consists of a capacitor and the other branch consists of an inductor in series with a nonlinear resistor. It is however suggested that much more complex external circuitinduced behavior can occur in real RTD experiments. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

INTRINSIC HIGHFREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF RESONANT TUNNELING DEVICES

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References (13)

Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb051702
Publisher site
See Article on Publisher Site

Abstract

Intrinsic highfrequency oscillations 2.5 THz in current and corresponding quantum well density, which have been simulated for a fixed bias voltage in the Negative Differential Resistance NDR region of the CurrentVoltage IV characteristics of a Resonant Tunneling Diode RTD, suggest an equivalent nonlinear autonomous circuit model. The intrinsic circuit parameters are calculated directly from the results of the quantum transport numerical simulations. These consist of a resistor in series with a twobranch parallel circuit, one branch consists of a capacitor and the other branch consists of an inductor in series with a nonlinear resistor. It is however suggested that much more complex external circuitinduced behavior can occur in real RTD experiments.

Journal

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Apr 1, 1991

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