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Influence of forward scattering, including ionizedimpurity and polar opticalphonon scattering, on electron transport phenomena in a 3valley ntype GaAs model subjected to a rapid change in field is studied. It is shown that the macroscopic effective mass of electrons in a nonparabolic band structure is smaller than the energydependent effective mass, which is usually assumed for modeling of GaAs devices, during the interval of velocity overshoot when strong forward scattering is involved. As a consequence, the hydrodynamic transport model, where the macroscopic effective mass is assumed energy dependent, leads to a smaller overshoot velocity.
COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1992
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