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Hot carrier injection in VDMOSFET for improvement of commutation process

Hot carrier injection in VDMOSFET for improvement of commutation process Purpose – The purpose of this work is to highlight the evolutions of the switching times parameters of commercial vertical diffuse metal oxide semiconductor field effect transistors after a hot carrier injection in the reverse bias pn junction. Design/methodology/approach – Experiment was done basically by hot carrier injection, where a large drain‐source voltage V DS is applied to reverse bias the body drain junction, then inducing a 30 mA reverse current. The drain polarization was increased gradually, by steps of 0.5 V/s, up to desired V DS value in order to prevent sudden breakdown. Switching time parameters were measured at different temperatures and up to 300°C. Findings – The experimental results show that the device rise time decreases significantly for the first period of stress time at room temperature, which increases the speed of the device during this turn‐on switch. This event was associated with the high‐electric field in the junction region that pulls electrons from the oxide gate into the channel, thus leaving trapped holes in the oxide bulk due to their low mobility. Originality/value – This research study has an important value in terms of engineering application where speed of electronic devices is one of the most valuable parameters in the communication and information technology fields. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Hot carrier injection in VDMOSFET for improvement of commutation process

R. El Bitar; C. Salame; P. Mialhe
Microelectronics International , Volume 24 (3): 6 – Jul 31, 2007
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Publisher
Emerald Publishing
Copyright
Copyright © 2007 Emerald Group Publishing Limited. All rights reserved.
ISSN
1356-5362
DOI
10.1108/13565360710779217
Publisher site
See Article on Publisher Site

Abstract

Purpose – The purpose of this work is to highlight the evolutions of the switching times parameters of commercial vertical diffuse metal oxide semiconductor field effect transistors after a hot carrier injection in the reverse bias pn junction. Design/methodology/approach – Experiment was done basically by hot carrier injection, where a large drain‐source voltage V DS is applied to reverse bias the body drain junction, then inducing a 30 mA reverse current. The drain polarization was increased gradually, by steps of 0.5 V/s, up to desired V DS value in order to prevent sudden breakdown. Switching time parameters were measured at different temperatures and up to 300°C. Findings – The experimental results show that the device rise time decreases significantly for the first period of stress time at room temperature, which increases the speed of the device during this turn‐on switch. This event was associated with the high‐electric field in the junction region that pulls electrons from the oxide gate into the channel, thus leaving trapped holes in the oxide bulk due to their low mobility. Originality/value – This research study has an important value in terms of engineering application where speed of electronic devices is one of the most valuable parameters in the communication and information technology fields.

Journal

Microelectronics International – Emerald Publishing

Published: Jul 31, 2007

Keywords: Switching circuits; Semiconductor devices; Temperature

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