Purpose This paper aims to report on the use of radio frequency nitrogen plasmaassisted molecular beam epitaxy RFMBE to grow highquality ntype In0.47Ga0.53NGaN on Si111 substrate using AlN as a buffer layer.Designmethodologyapproach Structural analyses of the InGaN films were performed by using Xray diffraction, atomic force microscopy, and Hall measurement. Metalsemiconductormetal MSM photodiode was fabricated on the In0.47Ga0.53NSi111 films. Electrical analysis of the MSM photodiodes was carried out by using currentvoltage IV measurements. Ideality factors and Schottky barrier heights for NiIn0.47Ga0.53N, was deduced to be 1.01 and 0.60eV, respectively.Findings The In0.47Ga0.53N MSM photodiode shows a sharp cutoff wavelength at 840nm. A maximum responsivity of 0.28AW was achieved at 839nm. The detector shows a little decrease in responsivity from 840 to 200nm. The responsivity of the MSM drops by nearly two orders of magnitude across the cutoff wavelength.Originalityvalue Focuses on IIInitride semiconductors, which are of interest for applications in high temperaturepower electronic devices.
Microelectronics International – Emerald Publishing
Published: Apr 18, 2008
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