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HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS

HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS The insulated gate bipolar transistor IGBT is an increasingly used power transistor which has the advantage over the more conventional DMOS structure of achieving a lower onresistance through the highinjection of electrons and holes into the drift region thereby causing conductivity modulation and a lowering of the electrical resistance. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png International Journal of Numerical Methods for Heat & Fluid Flow Emerald Publishing

HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0961-5539
DOI
10.1108/eb017496
Publisher site
See Article on Publisher Site

Abstract

The insulated gate bipolar transistor IGBT is an increasingly used power transistor which has the advantage over the more conventional DMOS structure of achieving a lower onresistance through the highinjection of electrons and holes into the drift region thereby causing conductivity modulation and a lowering of the electrical resistance.

Journal

International Journal of Numerical Methods for Heat & Fluid FlowEmerald Publishing

Published: Apr 1, 1992

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