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Heat generation in silicon nanometric semiconductor devices

Heat generation in silicon nanometric semiconductor devices Purpose – The purpose of this paper is to deal with the self‐heating of semiconductor nano‐devices. Design/methodology/approach – Transport in silicon semiconductor devices can be described using the Drift‐Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation. Findings – A new estimator of the heat generation rate to be used in MC simulations has been found. Originality/value – The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

Heat generation in silicon nanometric semiconductor devices

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Publisher
Emerald Publishing
Copyright
Copyright © 2014 Emerald Group Publishing Limited. All rights reserved.
ISSN
0332-1649
DOI
10.1108/COMPEL-11-2012-0327
Publisher site
See Article on Publisher Site

Abstract

Purpose – The purpose of this paper is to deal with the self‐heating of semiconductor nano‐devices. Design/methodology/approach – Transport in silicon semiconductor devices can be described using the Drift‐Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation. Findings – A new estimator of the heat generation rate to be used in MC simulations has been found. Originality/value – The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.

Journal

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing

Published: Jul 1, 2014

Keywords: Semiconductor devices; Monte Carlo simulation; Heating phenomenon

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