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N. Ula, G. Cooper, C. Davidson, S. Swierkowski, C. Hunt (1990)
Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devicesInternational Technical Digest on Electron Devices
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A computer program for the solution of the single carrier semiconductor equations in GaAs has been developed to simulate charge storage and transfer in GaAs chargecoupled devices. An uncoupled Newton method is used to solve the steady state problem, and a stable, uncoupled method is used for the transient solution. Using transient simulation, the transfer of a charge packet from well to well can be simulated over time. By comparing the size of the charge packet before and after the transfer, information on the charge transfer inefficency can be derived.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1991
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