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Fabrication of porous ZnO thin films using wet chemical etching with 0.5% HNO 3

Fabrication of porous ZnO thin films using wet chemical etching with 0.5% HNO 3 Purpose – The purpose of this paper is to synthesize porous zinc oxide (ZnO) by means of strain etching/wet chemical etching method with the use of 0.5% of nitric acid (HNO 3 ) etchant. The structural and surface morphological properties of the samples are accessed by using X‐ray diffraction (XRD) and scanning electron microscopy (SEM) characterization techniques. Design/methodology/approach – ZnO samples used in this work were deposited on the p‐Si (111) substrates by using radio frequency (RF) sputtering technique. Wet chemical etching processes with the use of 0.5% HNO 3 etchant was applied on these samples in order to obtain porous structure. The porous ZnO samples are characterized by means of XRD and SEM to access their structural and surface morphological properties. Findings – The XRD and SEM cross‐sectional measurements revealed that the thickness of the etched ZnO thin films is proportional to the etching time. SEM micrographs show that the surface morphology of ZnO changes over etching time. On the other hand, XRD results indicate that the crystallite sizes of the ZnO(002) decreases when the etching time increases. Originality/value – The paper shows how porous ZnO thin films have been successfully synthesized by using simple wet chemical etching. SEM images reveal that this method is reliable when producing porous structure ZnO surfaces. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Fabrication of porous ZnO thin films using wet chemical etching with 0.5% HNO 3

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Publisher
Emerald Publishing
Copyright
Copyright © 2012 Emerald Group Publishing Limited. All rights reserved.
ISSN
1356-5362
DOI
10.1108/13565361211237699
Publisher site
See Article on Publisher Site

Abstract

Purpose – The purpose of this paper is to synthesize porous zinc oxide (ZnO) by means of strain etching/wet chemical etching method with the use of 0.5% of nitric acid (HNO 3 ) etchant. The structural and surface morphological properties of the samples are accessed by using X‐ray diffraction (XRD) and scanning electron microscopy (SEM) characterization techniques. Design/methodology/approach – ZnO samples used in this work were deposited on the p‐Si (111) substrates by using radio frequency (RF) sputtering technique. Wet chemical etching processes with the use of 0.5% HNO 3 etchant was applied on these samples in order to obtain porous structure. The porous ZnO samples are characterized by means of XRD and SEM to access their structural and surface morphological properties. Findings – The XRD and SEM cross‐sectional measurements revealed that the thickness of the etched ZnO thin films is proportional to the etching time. SEM micrographs show that the surface morphology of ZnO changes over etching time. On the other hand, XRD results indicate that the crystallite sizes of the ZnO(002) decreases when the etching time increases. Originality/value – The paper shows how porous ZnO thin films have been successfully synthesized by using simple wet chemical etching. SEM images reveal that this method is reliable when producing porous structure ZnO surfaces.

Journal

Microelectronics International – Emerald Publishing

Published: May 4, 2012

Keywords: Thin films; Porosity; Zinc oxide; Wet chemical etching; X‐ray diffraction; Scanning electron microscopy; Nitric acid

References

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