Effects of Y2O3-LaF3 on the low temperature sintering and thermal conductivity of AlN ceramics

Effects of Y2O3-LaF3 on the low temperature sintering and thermal conductivity of AlN ceramics PurposeAluminum nitride (AlN) ceramics are suitable substrate and package materials for high-power integrated circuits.Design/methodology/approachDense AlN ceramics with Y2O3 and LaF3 as sintering additives are prepared. The effects of these additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics are investigated.FindingsResults show that 2 Wt.% Y2O3-doped additive is insufficient for the samples to achieve the full densification sintered at 1,700°C. When LaF3 is added with Y2O3, the samples are perfectly densified at the same sintering condition. The relative density and thermal conductivity of the samples are 97.8-99.07 per cent and 169.104-200.010 W·m-1·K-1, respectively. The density of the samples and their microstructure, especially the content and distribution of secondary phases, is necessary to control the thermal conductivity of AlN ceramics.Originality/valueY2O3 and LaF3 additives can effectively promote densification and enhance the thermal conductivity of AlN ceramics in a low sintering temperature, and the AlN ceramics added with Y2O3-LaF3 might have potential applications in package materials for high-power integrated circuits. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Effects of Y2O3-LaF3 on the low temperature sintering and thermal conductivity of AlN ceramics

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
1356-5362
DOI
10.1108/MI-03-2018-0016
Publisher site
See Article on Publisher Site

Abstract

PurposeAluminum nitride (AlN) ceramics are suitable substrate and package materials for high-power integrated circuits.Design/methodology/approachDense AlN ceramics with Y2O3 and LaF3 as sintering additives are prepared. The effects of these additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics are investigated.FindingsResults show that 2 Wt.% Y2O3-doped additive is insufficient for the samples to achieve the full densification sintered at 1,700°C. When LaF3 is added with Y2O3, the samples are perfectly densified at the same sintering condition. The relative density and thermal conductivity of the samples are 97.8-99.07 per cent and 169.104-200.010 W·m-1·K-1, respectively. The density of the samples and their microstructure, especially the content and distribution of secondary phases, is necessary to control the thermal conductivity of AlN ceramics.Originality/valueY2O3 and LaF3 additives can effectively promote densification and enhance the thermal conductivity of AlN ceramics in a low sintering temperature, and the AlN ceramics added with Y2O3-LaF3 might have potential applications in package materials for high-power integrated circuits.

Journal

Microelectronics InternationalEmerald Publishing

Published: Jan 7, 2019

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