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- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 0332-1649
- DOI
- 10.1108/eb051731
- Publisher site
- See Article on Publisher Site
Abstract
IV characteristics of GaAs nin structures are calculated by considering impact ionization of carriers. Impact ionization at reversebiased ni junction becomes a cause of steep current rise when an acceptor density in the ilayer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs nin structures are also simulated, and are shown to be strongly affected by existence of ni junctions.
Journal
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1991